Parameter

Symbol

Value

Unit

Storage temperature

Tst

-40~+100

°C

Operating temperature

Top

-40~+85

°C

APD voltage

V_R

Vbr

V

Soldering temperature/time

—

260/10

°C/ s

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Active area

—

55

um

R

Responsivity

λ=1310nm，M=1

0.75

0.9

-

A/W

λ=1550nm，M=1

0.9

1.05

-

Vb

Breakdown voltage

Id=10uA

40

50

60

V

Id

Dark current

V_r=0.9Vb

10

50

nA

C

Capacitance

f=1MHz，Vr=0.9Vb

0.38

0.5

pF

Mmax

Maximum

multiplication factor

λ=1310nm,1550nm, Ipo=2uA，Vr=V@Id=1uA

25

fc

Cutoff frequency

M=10

2.0

GHz

Temperature coefficient of Vb

—

0.09

V/°C

RL

Return loss

λ=1310nm

45

dB