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GaN-based UV photodiode
Category: UV Photodiode  Publish Time: 2014-06-14 17:59 

GaN-based UV photodiode
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 GaN-based UV photodiode

Model No:OEGS-AB-S
General Features
UVA+UVB photodiode
Photovoltaic mode operation
SMD2835packaging
Good visible blindness
High responsivity and low dark current
Specifications

Parameters

Symbol

Value

Unit

Maximum ratings

Operation temperature range

Topt

-25-85

C

Storage temperature range

Tsto

-40-85

C

Soldering temperature (3 s)

Tsol

260

C

Reverse voltage

Vr-max

-10

V

General characteristics(25)

Chip size

A

0.11

mm2

Dark current (Vr =-1 V)

Id

<1

nA

Photo current (1 mW/cm2 at 355 nm)

Iph

120

nA

Temperature coefficient

Tc

-0.1

%/C

Capacitance (at 0 V and 1 MHz)

Cp

3

pF

Spectral response characteristics (25 oC)

 

 

 

Wavelength of peak responsivisity

Λp

355

Nm

Peak responsivisity (at 355 nm)

Rmax

0.18

A/W

Spectral response range (R=0.1×Rmax) 

-

280-370

Nm

UV-visible rejection ratio (Rmax/R400 nm)

-

>104

  -  

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