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![GaN-based UV photodiode](upload/image/GP2_lit.png)
Delivery Fee : $0.00
Quantity :
Part NO. : | DWDMFBG –series |
Datasheet : |
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Availability : |
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Model
No:OEGT-ABC-L
General Features
Broad band UVA+UVB+UVC
photodiode
Photovoltaic mode operation
TO-46 metal housing
Good visible blindness
High responsivity and low dark current
Specifications
Parameters |
Symbol |
Value |
Unit |
Maximum ratings |
|||
Operation temperature range |
Topt |
-25-85 |
︒C |
Storage temperature range |
Tsto |
-40-85 |
︒C |
Soldering temperature (3 s) |
Tsol |
260 |
︒C |
Reverse voltage |
Vr-max |
-10 |
V |
General characteristics(25℃) |
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Chip size |
Chip size |
1 |
mm2 |
Dark current (Vr =-1 V) |
Id |
<1 |
nA |
Photo current (1 mW/cm2 at 355 nm) |
Iph |
1200 |
nA |
Temperature coefficient |
Tc |
-0.1 |
%/︒C |
Capacitance (at 0 V and 1 MHz) |
Cp |
23 |
pF |
Spectral response characteristics (25 oC) |
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|
|
Wavelength of peak responsivisity |
Λp |
355 |
Nm |
Peak responsivisity (at 355 nm) |
Rmax |
0.18 |
A/W |
Spectral response range (R=0.1×Rmax) |
- |
210-370 |
Nm |
UV-visible rejection ratio (Rmax/R400 nm) |
- |
>104 |
- |
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