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GaN-based UV photodiode
Category: UV Photodiode  Publish Time: 2014-06-14 21:35 

 GaN-based UV photodiode
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 Part NO. : DWDMFBG series
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 GaN-based UV photodiode


Model No:OEGT-ABC-L
General Features
Broad band UVA+UVB+UVC photodiode
Photovoltaic mode operation
TO-46 metal housing
Good visible blindness
High responsivity and low dark current
Specifications

Parameters

Symbol

Value

Unit

Maximum ratings

Operation temperature range

Topt

-25-85

C

Storage temperature range

Tsto

-40-85

C

Soldering temperature (3 s)

Tsol

260

C

Reverse voltage

Vr-max

-10

V

General characteristics(25)

Chip size

Chip size

1

mm2

Dark current (Vr =-1 V)

Id

<1

nA

Photo current (1 mW/cm2 at 355 nm)

Iph

1200

nA

Temperature coefficient

Tc

-0.1

%/C

Capacitance (at 0 V and 1 MHz)

Cp

23

pF

Spectral response characteristics (25 oC)

 

 

 

Wavelength of peak responsivisity

Λp

355

Nm

Peak responsivisity (at 355 nm)

Rmax

0.18

A/W

Spectral response range (R=0.1×Rmax) 

-

210-370

Nm

UV-visible rejection ratio (Rmax/R400 nm)

-

>104

-

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