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| Part NO. : | DCFBG-series |
| Datasheet : |
|
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S760 nm Laser Diode
Description
This monolithic laser diode incorporates a
distributed Bragg reflector (DBR) for stable frequency performance over its
life time. It provides a diffraction limited, single lateral and longitudinal
mode beam. Facets are passivated for high reliability. The 760 nm Laser Diode
is designed specifically for O2 detection.
Feathure
Wavelength tunable across several lines of the
O2 spectrum
around 760nm
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Facets passivated to withstand high power
without catastrophic optical damage (COD)
Epi designed for high reliability
Specification
Absolute Maximum Rating
|
Parameter |
Symbol |
Unit |
Min |
Max |
|
Storage Temperature |
TSTG |
°C |
0 |
80 |
|
Operating Temperature |
TOP |
°C |
10.0 |
40 |
|
CW Laser Forward Current,T=25°C |
IF |
mA |
- |
120** |
|
Laser Reverse Voltage |
VR |
V |
- |
0.0 |
|
Photodiode Forward Current 1/ |
IP |
mA |
- |
5.0 |
|
Photodiode Reverse Voltage 1/ |
VR |
V |
- |
20.0 |
|
Photodiode Dark Current, VR=10V, LD IF=0, 1/ |
ID |
nA |
- |
50 |
|
TEC Current 1/ |
ITEC |
A |
-2.0 |
2.0 |
|
TEC Voltage 1/ |
VTEC |
V |
-6.0 |
6.0 |
|
Thermistor Current 1/ |
ITHRM |
mA |
- |
1.0 |
|
Thermistor Voltage 1/ |
VTHRM |
V |
- |
10 |
|
Lead Soldering Temperature, 10 sec. Max. |
- |
°C |
- |
260 |
*Do not exceed
drive current or operating power of supplied LIV
CW
Characteristics at TC = 25°C unless otherwise specified
|
Parameter |
Symbol |
Unit |
Min |
Typ |
Max |
|
Center Wavelength @ 150mA |
λc |
nm |
759 |
760 |
762 |
|
Optical Output Power @ 150mA |
Po |
mW |
40-80 |
||
|
Slope Efficiency |
ηd |
W/A |
0.6 |
0.75 |
- |
|
Threshold Current |
Ith |
mA |
- |
70 |
90 |
|
Laser Series Resistance |
RS |
Ω |
- |
2.0 |
2.5 |
|
Laser Forward Voltage @ 150mA |
VF |
V |
- |
2.0 |
2.5 |
|
Thermistor Resistance @25°C, 2/ |
RT |
KΩ |
- |
10 |
- |
|
Photodiode Dark Current, VR=10V, |
ID |
nA |
- |
- |
50 |
|
Laser Line Width @ 150mA |
∆v |
MHz |
0.7 |
1 |
10 |
|
Polarization Extinction Ratio, 1/ |
PER |
dB |
-16 |
-19 |
- |
|
Beam Divergence @ FWHM |
θװ X θ┴ |
º |
- |
6 X 26 |
8 X 30 |
|
Side Mode Suppression Ratio |
SMSR |
dB |
-30 |
- |
- |
|
Laser Polarization |
|
|
|
TE |
|
|
Mode Structure |
|
|
Fundamental Mode |
||
Handling Precautions
These devices are sensitive to ESD. When
handling the module, grounded work area and wrist strap must be used. Always
store in an antistatic container with all leads shorted together.
Package
|
TO8 |
Butterfly |
 |
|
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