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| Part NO. : | DCFBG-series |
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767 nm Laser Diode
Description
The IDP 767DBR Series of high-power
edge-emitting lasers are based on Idealphotonics’s advanced single-frequency
laser technology. It provides a diffraction limited,single lateral and
longitudinal mode beam. Facets are passivated for high-power reliability. 767
nm Laser Diodes used for K D2 line spectroscopy.
Feathure
Available in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability
Specification
Absolute Maximum Rating
|
Parameter |
Symbol |
Unit |
Min |
Max |
|
Storage Temperature |
TSTG |
°C |
0 |
80 |
|
Operating Temperature |
TOP |
°C |
5.0 |
70 |
|
CW Laser Forward Current, T=Top |
IF |
mA |
- |
150** |
|
Pulsed Laser Forward Current, T=25°C, |
IF |
A |
- |
0.3 |
|
PW=300 ns, DC=10% |
||||
|
Laser Reverse Voltage |
VR |
V |
- |
0.0 |
|
Photodiode Forward Current 1/2/ |
IP |
mA |
- |
5.0 |
|
Photodiode Reverse Voltage 1/2/ |
VR |
V |
- |
20.0 |
|
Photodiode Dark Current, VR=10V, LD IF=0, 1/2/ |
ID |
nA |
- |
50 |
|
TEC Current 1/2/ |
ITEC |
A |
-2.0 |
2.0 |
|
TEC Voltage 1/2/ |
VTEC |
V |
-6.0 |
6.0 |
|
Thermistor Current 1/2/ |
ITHRM |
mA |
- |
1.0 |
|
Thermistor Voltage 1/2/ |
VTHRM |
V |
- |
10 |
|
External Back Reflection |
- |
dB |
- |
-14 |
|
Lead Soldering Temperature, 10 sec. Max.1/2/ |
- |
°C |
- |
260 |
|
Fiber Pull Force 1/ |
- |
N |
- |
5.0 |
|
Fiber Bend Radius 1/ |
- |
mm |
- |
35 |
**1/ Butterfly package
2/ TO8 package
**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC =25°Cunless otherwise specified
|
Parameter |
Symbol |
Unit |
Min |
Typ |
Max |
|
Center Wavelength |
λc |
nm |
765 |
767 |
769 |
|
Optical Output Power @ LIV Currrent |
Po |
mW |
20-80 |
||
|
Slope Efficiency, 1/ |
ηd |
W/A |
0.25 |
0.36 |
|
|
Slope Efficiency |
ηd |
W/A |
0.60 |
0.75 |
- |
|
Threshold Current |
Ith |
mA |
- |
50 |
70 |
|
Laser Series Resistance |
RS |
Ω |
- |
2.0 |
2.5 |
|
Laser Forward Voltage |
VF |
V |
- |
2.0 |
2.5 |
|
Thermistor Resistance @25°C, 1/2/ |
RT |
KΩ |
- |
10 |
- |
|
Photodiode Dark Current, VR=10V, LD IF=0, 1/2/ |
ID |
nA |
- |
- |
50 |
|
Laser Line Width |
∆v |
MHz |
- |
0.7 |
1.0 |
|
Polarization Extinction Ratio, 1/ |
PER |
dB |
-16 |
-19 |
- |
|
Beam Divergence @ FWHM |
θװ X θ┴ |
º |
- |
6 X 26 |
8 X 28 |
|
Side Mode Suppression Ratio |
SMSR |
dB |
-30 |
- |
- |
|
Laser Polarization |
|
|
|
TE |
|
|
Mode Structure |
|
|
Fundamental Mode |
||
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
Package
|
TO8 |
Butterfly |
 |
|
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