COMPANY INFO

LINKED

767 nm Laser Diode
Category: DBR  Publish Time: 2014-06-22 17:40 

767 nm Laser Diode
Price : $0.00
Delivery Fee : $0.00
Quantity :
 Part NO. :  DCFBG-series
 Datasheet :  
 Availability :  

767 nm Laser Diode

Description
The IDP 767DBR Series of high-power edge-emitting lasers are based on Idealphotonics’s advanced single-frequency laser technology. It provides a diffraction limited,single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. 767 nm Laser Diodes used for K D2 line spectroscopy.
Feathure
Available in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability
Specification
Absolute Maximum Rating

Parameter

Symbol

Unit

Min

Max

Storage Temperature

TSTG

°C

0

80

Operating  Temperature

TOP

°C

5.0

70

CW Laser Forward Current, T=Top

IF

mA

-

150**

Pulsed Laser Forward Current, T=25°C,

IF

A

-

0.3

PW=300 ns, DC=10%

Laser Reverse Voltage

VR

V

-

0.0

Photodiode Forward Current 1/2/

IP

mA

-

5.0

Photodiode Reverse Voltage 1/2/

VR

V

-

20.0

Photodiode Dark Current, VR=10V, LD IF=0, 1/2/

ID

nA

-

50

TEC Current 1/2/

ITEC

A

-2.0

2.0

TEC Voltage 1/2/

VTEC

V

-6.0

6.0

Thermistor Current 1/2/

ITHRM

mA

-

1.0

Thermistor Voltage 1/2/

VTHRM

V

-

10

External Back Reflection

-

dB

-

-14

Lead Soldering Temperature, 10 sec. Max.1/2/

-

°C

-

260

Fiber Pull Force 1/

-

N

-

5.0

Fiber Bend Radius 1/

-

mm

-

35

**1/ Butterfly package 2/ TO8 package
**Do not exceed drive current or operating power of supplied LIV

CW Characteristics at TC =25°Cunless otherwise specified

Parameter

Symbol

Unit

Min

Typ

Max

Center Wavelength

λc

nm

765

767

769

Optical Output Power @ LIV Currrent

Po

mW

20-80

Slope Efficiency, 1/

ηd

W/A

0.25

0.36

 

Slope Efficiency

ηd

W/A

0.60

0.75

-

Threshold Current

Ith

mA

-

50

70

Laser Series Resistance

RS

Ω

-

2.0

2.5

Laser Forward Voltage

VF

V

-

2.0

2.5

Thermistor Resistance @25°C, 1/2/

RT

-

10

-

Photodiode Dark Current, VR=10V, LD IF=0, 1/2/

ID

nA

-

-

50

Laser Line Width

∆v

MHz

-

0.7

1.0

Polarization Extinction Ratio, 1/

PER

dB

-16

-19

-

Beam Divergence @ FWHM

θװ X θ

º

-

6 X 26

8 X 28

Side Mode Suppression Ratio

SMSR

dB

-30

-

-

Laser Polarization

 

 

 

TE

 

Mode Structure

 

 

Fundamental Mode

**1/ Butterfly package  2/ TO-8 package
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
Package

TO8

Butterfly


Related Items


10um series of optical fiber
10um series of optical fiber
10um series of optical fiber
hahshshdhshd


Prev product770nm Laser Diode
Next productS760 nm Laser Diode