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920nm Laser Diode
Description
The IDP920DBR
Series of high-power edge-emitting lasers are based on Idealphotonics’s
advanced single-frequency laser technology. It provides a diffraction limited,
single lateral and longitudinal mode beam. Facets are passivated for high-power
reliability. Applications for the 920 nm laser diode include spectroscopy,
difference frequency generation, and low power DPSS replacement. It can
be ordered to a specific wavelength target for frequency doubling to specific
trapping wavelengths.
Feathure
WAvailable in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability
Specification
Absolute Maximum Rating
Parameter |
Symbol |
Unit |
Min |
Max |
Storage Temperature |
TSTG |
°C |
0 |
80 |
Operating Temperature |
TOP |
°C |
5.0 |
70 |
CW Laser Forward Current, T=Top |
IF |
mA |
- |
150** |
Pulsed Laser Forward Current, T=25°C, |
IF |
A |
- |
0.5 |
PW=300 ns, DC=10% |
||||
Laser Reverse Voltage |
VR |
V |
- |
2.0 |
Photodiode Forward Current 1/ 2/ |
IP |
mA |
- |
5.0 |
Photodiode Reverse Voltage 1/ 2/ |
VR |
V |
- |
20.0 |
Photodiode Dark Current, VR=10V, LD IF=0, 1/ 2/ |
ID |
nA |
- |
50 |
TEC Current 1/ 2/ |
ITEC |
A |
-2.5 |
2.5 |
TEC Voltage 1/ 2/ |
VTEC |
V |
-6.0 |
6.0 |
Thermistor Current 1/ 2/ |
ITHRM |
mA |
- |
1.0 |
Thermistor Voltage 1/ 2/ |
VTHRM |
V |
- |
10 |
ESD (HBM) |
- |
V |
- |
500 |
External Back Reflection |
- |
dB |
- |
-14 |
Lead Soldering Temperature, 10 sec. Max., 1/ 2/ |
- |
°C |
- |
260 |
Fiber Pull Force 1/ |
- |
N |
- |
5.0 |
Fiber Bend Radius 1/ |
- |
mm |
- |
35 |
**1/ Butterfly package 2/ TO8 package
**Do not exceed drive current or operating power of supplied LIV
CW Characteristics at TC =25°Cunless otherwise specified
Parameter |
Symbol |
Unit |
Min |
Typ |
Max |
Center Wavelength |
λc |
nm |
918 |
920 |
922 |
Optical Output Power @ LIV current |
Po |
mW |
40-120 |
||
Slope Efficiency, 1/ |
ηd |
W/A |
0.3 |
0.36 |
|
Slope Efficiency |
ηd |
W/A |
0.6 |
0.72 |
- |
Threshold Current |
Ith |
mA |
- |
30 |
40 |
Laser Series Resistance |
RS |
Ω |
- |
2.0 |
2.5 |
Laser Forward Voltage |
VF |
V |
- |
2.0 |
2.5 |
Thermistor Resistance 25°C, 1/ 2/ |
RT |
KΩ |
- |
10 |
- |
Photodiode Dark Current,VR=10V,LD IF=0, 1/ 2/ |
ID |
nA |
- |
- |
50 |
Laser Line Width |
∆v |
MHz |
- |
8 |
10 |
Beam Divergence @ FWHM |
θװ X θ┴ |
º |
- |
6 X 32 |
8 X 34 |
Side Mode Suppression Ratio |
SMSR |
dB |
-30 |
- |
- |
Polarization Extinction Ratio, 1/ |
PER |
dB |
-16 |
-19 |
- |
Laser Polarization |
|
|
|
TE |
|
Mode Structure |
|
|
Fundamental Mode |
**1/ Butterfly package 2/ TO-8 package
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
Package
TO8 |
Butterfly |
|
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