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1083 nm Laser Diode
Category: DBR  Publish Time: 2014-06-22 20:11 

1083 nm Laser Diode
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1083 nm Laser Diode

Description
The IDP1083DBR Series of high-power edge-emitting lasers are based on Idealphotonics’s advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Applications for the 1083 nm laser diode include fiber amplifier seeding, spectroscopy, difference frequency generation, and low power DPSS replacement.  The Spectroscopy Series 1083 nm laser diode is certified to be resonant with the metastable helium line.
Feathure
WAvailable in several package styles
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency
Technology
DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability
Specification
Absolute Maximum Rating

Parameter

Symbol

Unit

Min

Max

Storage Temperature

TSTG

°C

0

80

Operating  Temperature

TOP

°C

5.0

70

CW Laser Forward Current, T=Top

IF

mA

-

300**

Pulsed Laser Forward Current, T=25°C,

IF

A

-

1.0

PW=300 ns, DC=10%

Laser Reverse Voltage

VR

V

-

2.0

Photodiode Forward Current 12/

IP

mA

-

5.0

Photodiode Reverse Voltage 12/

VR

V

-

20.0

Photodiode Dark Current, VR=10V, LD IF=0, 12/

ID

nA

-

50

TEC Current 12/

ITEC

A

-2.5

2.5

TEC Voltage 12/

VTEC

V

-6.0

6.0

Thermistor Current 1/  2/

ITHRM

mA

-

1.0

Thermistor Voltage 1/  2/

VTHRM

V

-

10

ESD (HBM)

-

V

-

500

External Back Reflection

-

dB

-

-14

Lead SolderingTemperature, 10 sec. Max., 12/

-

°C

-

260

Fiber Pull Force 1/

-

N

-

5.0

Fiber Bend Radius 1/

-

mm

-

35

**1/ Butterfly package 2/ TO8 package
**Do not exceed drive current or operating power of supplied LIV

CW Characteristics at TC =25°Cunless otherwise specified

Parameter

Symbol

Unit

Min

Typ

Max

Center Wavelength 

λc

nm

1081

1083

1085

Optical Output Power @ LIV current

Po

mW

40-120

Slope Efficiency, 1/

ηd

W/A

0.3

0.36

 

Slope Efficiency

ηd

W/A

0.6

0.72

-

Threshold Current

Ith

mA

-

30

40

Laser Series Resistance

RS

Ω

-

2.0

2.5

Laser Forward Voltage

VF

V

-

2.0

2.5

Thermistor Resistance @25°C, 2/

RT

-

10

-

Photodiode Dark Current, VR=10V, LD IF=0, 2/

ID

nA

-

-

50

Beam Divergence @ FWHM

θװ X θ

º

-

6 X 32

8 X 34

Laser Line Width

∆v

MHz

-

8

10

Side Mode Suppression Ratio

SMSR

dB

-30

-

-

Polarization Extinction Ratio, 1/

PER

dB

-16

-19

-

Laser Polarization

 

 

 

TE

 

Mode Structure

 

 

Fundamental Mode

1/ Butterfly package  2/ TO-8 package
Handling Precautions
These devices are sensitive to ESD. When handling the module, grounded work area and wrist strap must be used. Always store in an antistatic container with all leads shorted together.
Package

TO8

Butterfly


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