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![LEOI-30A Diffraction Intensity Measurement System - Enhanced Model](upload/image/oes6_lit.png)
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LEOI-30A Diffraction Intensity Measurement System - Enhanced Model
Description
This apparatus is designed to quantitatively investigate diffraction and
interference effects of single-slit, multi-slit, and single-wire. There are
three options of the photo-receiving device, i.e. a photo-cell with amplifier
(option 1) for manual data acquisition, a linear CCD (option 2) for real-time
data display on an oscilloscope, and a linear CCD with automatic data
acquisition (option 3) for PC .
Specification
Optical
Rail
length 1.1 m
Semiconductor
Laser
3.0 mW @650
nm
Element
Single-Slit
slit width:
0.07 mm, 0.10 mm, and 0.12 mm
Single-Wire
diameter:
0.10 mm and 0.12 mm
Double-Slit
slit width 0.02
mm , central spacing 0.04 mm
Double-Slit
slit width
0.07 mm , central spacing 0.14 mm
Double-Slit
slit width
0.07 mm , central spacing 0.21 mm
Double-Slit
slit width
0.07 mm , central spacing 0.28 mm
Triple-Slit
slit width
0.02 mm , central spacing 0.04 mm
Quadruple-Slit
slit width
0.02 mm , central spacing 0.04 mm
Pentuple-Slit
slit width
0.02 mm , central spacing 0.04 mm
Photocell
Detector (Option 1)
With 0.1 mm
reading ruler & amplifier, connected to galvanometer
CCD (Option
2)
pixel number:
2700; size: 11×11 μm; spectral range: 0.3~0.9 μm
with
synchronization/signal ports, connected to an oscilloscope
CCD and Data
Acquisition (Option 3)
USB connected
to PC, DAC 12-bit, with application program
![](/upload/image/20140704033500_76568.png)
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