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Si PIN Photodiode IP-Si 101 Series
Characteristics
Planar forward
detecting method
Fast response speed
Low dark current
High responsively
High reliability
Applications
Fiber optical
communication, Sensing, Distance measurement
Visible and near infrared detection, high speed optical pulse detection and
industrial process control applications.
Mechanism
Device works under
the reveIPe bias, when light incident upon the device, the light is absorbed by
semiconductor material, a pair of electron and hole will appear in the
depletion layer or in the area near the depletion layer, and separated by the
bias field. When carrier goes through the depletion layer, the photo current
appear in the circuit, and then O-E conveIPion is completed.
Technical Parameter(TA=23℃)
Characteristics Curve
Package Information and Usage instruction (Pin Configuration is the back View )
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