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Si PIN Photo Diode IP-Si 3214Y
Category: Silicon detector  Publish Time: 2014-07-09 22:47 

Si PIN Photo Diode IP-Si 3214Y
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 Part NO. :  DCFBG-series
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Si PIN Photo Diode IP-Si 3214Y

Characteristics
Low Dark Current, Low Noise
High Response Speed
High Responsivity
High Reliability
Simple Usage
Mechanism
Works under reverse bias, When light strikes the sensitive area of the device, a pair of electron and hole will appear, the carrier go through the depletion under bias,the optical current appear in circuit. The 4 PD in the device can be used individually, and also can be used together.
Technical Parameter(TA=23℃)


Typical Operating Characteristics (TA=23℃)




Note:
The device works under the reverse bias condition.
Avoid the environment light incident into device, the light can increase the noise of the device.
The device should be stored in dry place with the good ventilation. Avoid the erosive gas.

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