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DFB-0785-100-TO3, DFB Diode Laser
Category: DFB  Publish Time: 2014-08-25 17:49 

DFB-0785-100-TO3, DFB Diode Laser
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DFB-0785-100-TO3, DFB Diode Laser

Wavelength: Selection for Raman Spectroscopy 785nm
The DFB-0785-100-TO3 is a high power MOVPE grown GaAsP/AlGaAs Distributed Feedback diode laser. The chips are mounted in TO3 can with Peltier cooler. Fully mode-hop free tuning selection available upon request.
Specification
(The characteristics are measured at 25°C operation temperature.)

Parameter

Symbol

Unit

min.

typ.

max.

 

Center Wavelength

c

nm

784

785

786

Spectral Width

 

MHz

 

2

10

Temperature Coefficient

T

nm/K

 

0.06

 

Laser Current Coefficient

I

nm/mA

 

0.003

 

 

Output Power

Popt

mW

100

 

 

Slope Efficiency

 

mW/mA

0.6

0.8

1.0

Threshold Current

Ith

mA

 

 

70

Operation Current @ Popt = 80mW

Iopt

mA

 

 

180

 

Beam Divergence   (FWHM)

 

deg.

6

8

10

Beam Divergence   (FWHM)

 

deg.

18

21

24

Polarization

 

 

 

TM

 

Mode Structure

 

 

fundamental transverse mode

Laser Mount:    TO3 - can with Peltier cooler

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