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Part NO. : | OEST-ABC-L–series |
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GaN-based UV photodiode
Features
● Broad band UVA+UVB+UVC photodiode
● Photovoltaic mode operation
● TO-46 metal housing
● Good visible blindness
● High responsivity and low dark current
Applications
● Ultraviolet radiation monitoring
● Solar UV index detection
● Flame monitoring
Specifications
Parameters
Symbol
Value
Unit
Maximum ratings
Operation
temperature range
Topt
-25-85
︒C
Storage
temperature range
Tsto
-40-85
︒C
Soldering
temperature (3 s)
Tsol
260
︒C
Reverse voltage
Vr-max
-10
V
General
characteristics(25℃)
Chip size
Chip size
1
mm2
Dark current (Vr
=-1 V)
Id
<1
nA
Photo current (1
mW/cm2 at 355 nm)
Iph
1200
nA
Temperature
coefficient
Tc
-0.1
%/︒C
Capacitance (at
0 V and 1 MHz)
Cp
23
pF
Spectral
response characteristics (25 oC)
Wavelength of
peak responsivisity
Λp
355
Nm
Peak
responsivisity (at 355 nm)
Rmax
0.18
A/W
Spectral
response range (R=0.1×Rmax)
-
210-370
Nm
UV-visible
rejection ratio (Rmax/R400 nm)
-
>104
-
Package Dimension
Spectral response
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