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GaN-based UV photodiode
Category: UV Photodiode  Publish Time: 2016-06-22 17:50 

GaN-based UV photodiode
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 Part NO. : OEST-ABC-Lseries
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GaN-based UV photodiode


Features
● Broad band UVA+UVB+UVC photodiode
● Photovoltaic mode operation
● TO-46 metal housing
● Good visible blindness
● High responsivity and low dark current

Applications

● Ultraviolet radiation monitoring
● Solar UV index detection
● Flame monitoring

Specifications

Parameters

Symbol

Value

Unit

Maximum ratings

Operation temperature range

Topt

-25-85

︒C

Storage temperature range

Tsto

-40-85

︒C

Soldering temperature (3 s)

Tsol

260

︒C

Reverse voltage

Vr-max

-10

V

General characteristics(25℃)

Chip size

Chip size

1

mm2

Dark current (Vr =-1 V)

Id

<1

nA

Photo current (1 mW/cm2 at 355 nm)

Iph

1200

nA

Temperature coefficient

Tc

-0.1

%/︒C

Capacitance (at 0 V and 1 MHz)

Cp

23

pF

Spectral response characteristics (25 oC)

 

 

 

Wavelength of peak responsivisity

Λp

355

Nm

Peak responsivisity (at 355 nm)

Rmax

0.18

A/W

Spectral response range (R=0.1×Rmax)

-

210-370

Nm

UV-visible rejection ratio (Rmax/R400 nm)

-

>104

-



Package Dimension


Spectral response


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