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Part NO. : | OEST-ABC-L–series |
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SiC-based UV photodiode
Features
● Broad band UVA+UVB+UVC photodiode
● Photovoltaic mode operation
● TO-46 metal housing
● Good visible blindness
● High responsivity and low dark current
Applications
● Ultraviolet radiation monitoring
● Solar UV index detection
● Flame monitoring
Specifications
Parameters |
Symbol |
Value |
Unit |
Maximum ratings |
|||
Operation temperature range |
Topt |
-25-100 |
︒C |
Storage temperature range |
Tsto |
-40-100 |
︒C |
Soldering temperature (3 s) |
Tsol |
260 |
︒C |
Reverse voltage |
Vr-max |
-20 |
V |
General characteristics(25℃) |
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Chip size |
A |
1 |
mm2 |
Dark current (Vr =-5 V) |
Id |
<0.1 |
nA |
Photo current (1 mW/cm2 at 280 nm) |
Iph |
1100 |
nA |
Temperature coefficient |
Tc |
-0.1 |
%/︒C |
Capacitance (at 0 V and 1 MHz) |
Cp |
76 |
pF |
Spectral response characteristics (25 ℃) |
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Wavelength of peak responsivisity |
Λp |
280 |
Nm |
Peak responsivisity (at 280 nm) |
Rmax |
0.13 |
A/W |
Spectral response range (R=0.1×Rmax) |
- |
215-360 |
Nm |
UV-visible rejection ratio (Rmax/R400 nm) |
- |
>105 |
- |
Package Dimension
Spectral response
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