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QAD-1000L InGaAs Quadrant APD Detector
Category: InGaAs detector  Publish Time: 2017-02-26 12:21 

QAD-1000L InGaAs Quadrant APD Detector
Price : $1200.00
Delivery Fee : $0.00
Quantity :
 Part NO. : QAD-1000L 
 Datasheet :
 Availability :  In store

QAD-1000L InGaAs Quadrant APD Detector


DESCRIPTION

nGaAs Quadrant APD Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1mm in diameter. Planar-passivated device structure.

Applications

● Laser guidance

● Laser positioning

● Laser navigation

● Laser range finder

Features

● Top illumination planar APD
● Narrow Element gap,
● Low Crosstalk,
● Good Reponsivity homogeneity of each Quadrant

ABSOLUTE MAXIMUM RATINGS (T=25°C)

Operating voltage

0.99×VBR

Operating temperature

-50~+85℃

Power dissipation

100mW

Forward current

10mA

storage temperature

-55~+100℃

Soldering temperature(time)

260℃10s

OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)

Parameters

Sym

Test conditions

Min

Yyp

Max

Unit

Response Spectrum

λ

1000~1700

nm

Active diameter

φ

1000

μm

Element Gap

 

100

μm

Reponsivity

Re

λ=1.55µm,φe=1µw, M=10

9.0

9.5

 

A/W

Maximum multiplication gain

M

 

20

 

 

 

Crosstalk

SL

M=10

 

 

10%

 

Response time

ts

f=1MHz,RL=50Ω

 

1.5

3.0

ns

Dark current

ID

M=10

 

25

100

nA

Reverse breakdown voltage

VCC

IR=100uA

 

 

60

V

Capacitance

 

 

 

12

15

pF

Operating voltage temperature
coefficient

δ

Tc=-40+85℃

 

0.10

0.15

V/℃

TYPICAL CHARACTERISTICS


DIMENSIONAL OUTLINE



Electric circuit 


The package and lead 
— This detector need feedback of voltage temperature when operating.
— The suitable ESD protecting mersures are recommend in storage,transporting and using. 

Related Items:


1310nm 

Superluminescent Diode

High Sensitivity PIN-FET

 Receiver Module

ICS-4000 PM Fiber Fused Biconic

 Tapering System



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