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| Part NO. : | QPD-1000I |
| Datasheet : |
|
| Availability : | In store |
QPD-3000I InGaAs Quadrant PIN Detector
Description
InGaAs Quadrant PIN Detector, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. Large photosensitive area is 3mmX4 in diameter. Planar-passivated device structure.
Key Features
● Top illumination planar PD
● Narrow Element gap,
● Low Crosstalk,High reliability
● Good Reponsivity homogeneity of each Quadrant
Absolute Maximum Ratings (T=25°C)
|
Operating voltage |
15V |
Operating temperature |
-50~+100℃ |
Power dissipation |
100mW |
|
Forward current |
10mA |
storage temperature |
-55~+125℃ |
Soldering temperature(time) |
260℃（10s） |
Optical & Electrical Characteristics(T=25°C)
Parameters
Sym
Test conditions
Min
Typ
Max
Unit
Response Spectrum
λ
—
1000~1700
nm
Active diameter
φ
—
3000X4
μm
Element Gap
—
32
μm
Reponsivity
Re
VR=9V,λ=1.55μm,φe=10μW
0.9
A/W
VR=9V,λ=0.90μm，φe=10μW
0.3
Max linear power
Φs
VR =9V, RL=50Ω
10
mW
Crosstalk
SL
VR =9V
2%
Response time
ts
VR=9V， RL=50Ω
1.0
2.0
ns
Dark current
ID
VR=9V
5.0
nA
Reverse breakdown voltage
VBR
IR=10μA
30
V
-3dB bandwidth
BW
VR=9V,λ=1.55μm，RL=50Ω
100
MHZ
Time On
Ton
VR=9V,λ=1.55μm，RL=50Ω
5
ns
Time Off
Toff
VR=9V,λ=1.55μm，RL=50Ω
5
ns
Operating voltage temperature
δ
Tc=-40～+85℃
0.10
0.15
V/℃
Shunt impedance
Rsh
VR=10mV
75
MΩ
Ununiformity among quadrants
δRe’
VR=9V,λ=1.55μm,φe=10μW
2%
Ununiformity in quadrant
δRe
VR=9V,λ=1.55μm,φe=10μW
2%
coefficient
TYPICAL CHARACTERISTICS
DIMENSIONAL OUTLINE
The package and lead
— This detector need feedback of voltage temperature when operating.
—The suitable ESD protecting mersures are recommend in storage,transporting and using.
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