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Si-Photodiode Chip—PD 0.9×0.9
Category: Silicon detector  Publish Time: 2016-05-31 19:52 

Si-Photodiode Chip—PD 0.9×0.9
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Si-Photodiode Chip—PD 0.9×0.9


Absolute Maximum Rating 

Parameter

Symbol

Rating

Unit

Operating temperature

TC

-40～+85

℃

Storage temperature

TSTG

-50～+100

℃


The Opto-electronic Characteristics（@Tc=22±3℃）

Parameters

Sym.

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

-

350～1100

nm

Active Size

A

-

0.9×0.9

mm2

Reponsivity

Re

λ=0.90μm, VR=10V, φe=1μw

0.50

-

-

A/W

λ=0.66μm, VR=10V, φe=1μw

0.30

Rise time

tr

λ=0.85μm, VR=10V, φe=1μw

-

8

-

ns

Forward Voltage

VF

IF=1mA

-

-

0.9

V

Reverse Breakdown Voltage

VBR

ID=10A, φe=0

20

 

-

 

-

 

V

Dark Current

ID

VR=10V, φe=0

-

 

10

nA

Capacitance

CPD

VR=10V, φe=0, f=1MHz

-

 

5

 

-

 

pF


Outline Diagram & Die Dimensions

Die Size

1.1.mm×1.1mm

Die Thickess

320±50μm

Bond Pad Diameter

120μm

Photosensitive Size

0.9mm×0.9mm

P metal

Al

N metal

Au

Note: The structure of PIN PD is planar and front illuminated with P electrode on the top and N electrode on the bottom.
Notes

1.Take appropriate ESD protections to avoid damage.
2.InP chips are fragile and easily damaged, so special caution should be used when handling. Do not handle with tweezers. A vacuum tip with a flat surface is recommended.
3.Bonding force and temperature should be applied in a gradual fashion.

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