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2.7um Extended InGaAs Photodiodes
Category: InGaAs detector  Publish Time: 2018-03-23 20:48 

2.7um Extended InGaAs Photodiodes
Price : ＄0.00
Delivery Fee : ＄0.00
Quantity :
 Part NO. : PL-C-☆-AD▽-W□□□□-XX
 Datasheet :
 Availability :  In store

2.7um Extended InGaAs Photodiodes


Description


The PL3000 Series is a panchromatic PIN Photodiode with a Nominal wavelength cut-off at 2700nm.This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt Resistance in Combination with excellent responsivity over a wide range. What’s amazing is that we can support flexible package TO-46, TO-18 or TO-5 and with optional Active diameter.


Features:

• Active Diameter (0.3mm to 3mm)
• Longer Cutoff Wavelength 2.7um
• High Shunt Resistance
• Multiple  Lens  (Biconvex, Planoconvex, or Ball)
• Packages (TO-46, TO-18 or TO-5)


Applications:

• Gas Sensing Monitor
• Hydrocarbon Sensor
• Flame/Spark Detection
• FTIR
• Spectroscopy
• SWIR Photodetection


2.7 um Extended Response Electrical Characteristics @ 25 ºC ± 2 ºC


Performance Specification

PLC300

/2.6

PLC500

/2.6

PLC1000

/2.6

PLC2000

/2.6

PLC3000

/2.6

Units

Active Diameter

0.3

0.5

1

2

3

mm

Peak Wavelength (typ)

2.2±0.1

2.2±0.1

2.2±0.1

2.2±0.1

2.2±0.1

um

Cutoff Wavelength (50%)

2.6±0.1

2.6±0.1

2.6±0.1

2.6±0.1

2.6±0.1

um

Responsivity @ λP(min/typ)

0.9/1.0

0.9/1.0

0.9/1.0

0.9/1.0

0.9/1.0

A/W

Shunt Resistance (min/typ)

16K/25K

5K/8K

2K/4K

0.5K/1.5K

0.2K/0.5K

Ω

Dark Current (max)

13@1v

20@0.5v

80@0.5v

320@0.5v

500@0.5v

uA

Capacitance (typ) @ 0 V

100

270

1000

4400

10000

pF

Bandwidth w/50Ω@0v(typ)

32

16

3.2

0.8

0.35

MHz

Rise time w/50Ω@0v(typ)

11

22

110

440

1000

ns

NEP@λPEAK(typ)

81x10-14

143x10-14

203x10-14

331x10-14

574x10-14

W/Hz1/2

Linearity(±0.2dB@0v)

6

6

6

6

6

dBm

Case Style

TO-46

TO-46

TO-46

TO-5

TO-5

 


Maximum Ratings


Performance Specification

PLC300/2.6

PLC500/2.6

PLC1000/2.6

PLC2000/2.6

PLC3000/2.6

Units

Storage Temperature

-40 to 125

-40 to 125

-40 to 125

-40 to 125

-40 to 125

℃

Operating Temperature

-40 to 85

-40 to 85

-40 to 85

-40 to 85

-40 to 85

℃

Reverse Voltage

2

0.5

0.5

0.5

0.5

V

Reverse Current

10

10

10

10

10

mA

Forward Current

10

10

10

10

10

mA

Power Dissipation

50

50

50

50

50

mW


Fig1. Spectral Response


Fig2 Responsivity Temperature Coefficient I


Fig3 Responsivity Temperature Coefficient II


Fig4 Capacitance VS Reserve Voltage


Fig5 Dark Current VS. Reserve Voltage


Fig6 Shunt Resistance VS. Temperature

Ordering Information

PL-C-☆-AD▽-W□□□□-XX

☆  ：Material

A：Si PD

B：InGaAs PD

C：Si APD

D：InGaAs APD

E：Si Quadrant APD

F：InGaAs Quadrant APD

▽：Active Diameter

0.75:75um

3：300um

5：500um

8：800um

10:1000um

20:2000um

30:3000um

50:5000um

□  □□□：Response Wavelength

4010：400-1100nm(Si)

9017：900-1700nm(InGaAs)

9021：900-2100nm(InGaAs)

9027：900-2700nm(InGaAs)

XX: Package Type

T46W=TO46 Window

T18W=TO18 Window

T5W=TO5 Window

T46L=TO46 Lens

T18L=TO18 Lens

T5L=TO5 Lens

T46W=TO46 Window

T46W=TO46 Window

PSA=Pigtail SMF-28E+ FC/APC

PSP= Pigtail SMF-28E+ FC/PC

PPA= Pigtail PM Fiber+ FC/APC

PPP= Pigtail PM Fiber+ FC/PC


Notice



1.   Protecting Diode Lasers from Electro-Static Discharge (ESD)

2.   Stress Greater than those listed under”ABSOLUTE MAXIMUM

 RATINGS” may cause permanent damage to this LD;these are 

stress ratings only and functional operational of the device at

 these or any other condition beyond those indicated for extend 

periods of time may effect device.