Center wavelength | Half width high bandwidth | Transmittance | Gas | Substrate |
---|---|---|---|---|
4265nm | 120nm | 70% | CO₂ | Silicon |
型号 | 中心波长(nm) | 中心波长偏差(nm) | 半宽高带宽(nm) | 半宽高带宽偏差(nm) | 透射率 % | 气体 | 基材 | Blocking(nm) |
BP-3050-100 nm | 3050 | ± 30 | 100 | ± 20 | 70 | C₂H₂ | Sapphire | 30 000 |
NB-3275-080 nm | 3275 | ± 20 | 80 | ± 20 | 70 | HC | Sapphire | 30 000 |
NB-3355-040 nm | 3355 | ± 20 | 40 | ± 10 | 70 | C₂H₆ | Sapphire | 30 000 |
BP-3400-120 nm | 3400 | ± 30 | 120 | ± 20 | 70 | HC | Sapphire | 30 000 |
BP-3400-120 nm Si | 3400 | ± 30 | 120 | ± 20 | 70 | HC | Silicon | 11 000 |
NB-3910-070 nm | 3910 | ± 30 | 70 | ± 15 | 70 | Ref | Silicon | 11 000 |
BP-4265-200 nm | 4265 | ± 30 | 180 | ± 20 | 70 | CO₂ | Sapphire | 30 000 |
NB-4265-120 nm Si | 4265 | ± 30 | 120 | ± 20 | 70 | CO₂ | Silicon | 11 000 |
NB-4525-083 nm | 4525 | ± 20 | 83 | ± 6 | 70 | N₂O | Sapphire | 30 000 |
NB-4525-083 nm Si | 4525 | ± 20 | 83 | ± 6 | 70 | N₂O | Silicon | 11 000 |
BP-4650-180 nm | 4650 | ± 40 | 180 | ± 20 | 70 | CO | Sapphire | 30 000 |
BP-4650-180 nm Si | 4650 | ± 40 | 180 | ± 20 | 70 | CO | Silicon | 11 000 |
NB-4720-090 nm | 4720 | ± 20 | 90 | ± 10 | 70 | CO | Sapphire | 30 000 |
NB-4720-090 nm Si | 4720 | ± 20 | 90 | ± 10 | 70 | CO | Silicon | 11 000 |
NB-5680-165 nm | 5680 | ± 40 | 165 | ± 30 | 60 | H₂O | Sapphire | 30 000 |
NB-5680-165 nm Si | 5680 | ± 40 | 165 | ± 30 | 70 | H₂O | Silicon | 11 000 |
NB-6250-100 nm | 6250 | ± 40 | 100 | ± 30 | 70 | NO₂ | Silicon | 11 000 |
BP-6580-200 nm | 6580 | ± 40 | 200 | ± 20 | 70 | H₂O | Silicon | 14 000 |
NB-7300-180 nm | 7300 | ± 50 | 180 | ± 20 | 70 | SO₂ | Silicon | 11 000 |
BP-7675-242 nm | 7675 | ± 50 | 242 | ± 30 | 70 | CH₄ | Silicon | 12 000 |
BP-10540-690 nm | 10540 | ± 100 | 690 | ± 100 | 70 | SF₆ | Ge | 16 500 |
BP-10540-690 nm Si | 10540 | ± 100 | 690 | ± 100 | 60 | SF₆ | Silicon | 16 500 |