筱晓光子

All Categories

Home >

Si avalanche photodetector

Silicon Si High Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18

The photosensitive surface diameter of C30902EH high-performance silicon avalanche photodiode (APD) is 0.5 mm, which is suitable for biomedical and analytical applications. This Si APD is designed as a dual diffusion "penetrating" structure, providing high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequencies up to approximately 800 MHz. The detector chip adopts a modified TO-18 package and is sealed behind a flat glass window.

Product PN#	product name		Other parameters
C30902EH	Si High-Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18			Add Inquiry

Silicon Si High Sensitivity Avalanche Photodiode APD Module C12702 Series 200-1000nm

APD is a photodiode with internal gain generated by applying reverse voltage. They have a higher signal-to-noise ratio (SNR) than PIN photodiodes, as well as fast time response, low dark current, and high sensitivity. The spectral response range is usually in the range of 200-1150 nm. C12702-12 is a short wave type with an effective area of Φ 3.0mm.

Product PN#	product name	Spectral response	Photographic specifications	Other parameters

400-1100nm silicon Si avalanche balanced detector BAPD series

Product PN#	product name
BAPD-200M-B-FC/APC	400-1100nm Si Avalanche Balanced Detector 200MHz	Add Inquiry
BAPD-100M-B-FC/APC	400-1100nm Si Avalanche Balanced Detector 100MHz	Add Inquiry
BAPD-1G-B-FC/APC	400-1100nm Si Avalanche Balanced Detector 1GHz	Add Inquiry
BAPD-300M-B-FC/APC	400-1100nm Si Avalanche Balanced Detector 300MHz	Add Inquiry
BAPD-400M-B-FC/APC	400-1100nm Si Avalanche Balanced Detector 400MHz	Add Inquiry
BAPD-500M-B-FC/APC	400-1100nm Si Avalanche Balanced Detector 500MHz	Add Inquiry
BAPD-2G-B-FC/APC	400-1100nm Si Avalanche Balanced Detector 2GHz	Add Inquiry