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InGaAs photodiode

Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)

The PL3000 series is a full-color PIN photodiode with a cutoff wavelength of up to 2700nm. It uses InGaAs material, a ternary compound semiconductor used to make various optoelectronic devices, and the material itself has stable performance. This series of designs can be used for environmental gas detection applications, measuring CO or CO2. It provides excellent parallel resistance and response over a wide spectral range. In addition, we can change the read pin to TO-46, to-18, TO-5 optional.

Product PN#	product name	Spectral response range	2mm	Other parameters
PLC-B-2000- W2.6- TO5	450-2700nm large light sensitive surface InGaAs indium gallium arsenide photodiode with a diameter of 2mm	450-2700nm	2mm		Add Inquiry

Indium Gallium Arsenide InGaAs Extended Photodiode 2.2um

The 2.2um extended InGaAs photodiode has a response cutoff wavelength of 2.2um, providing excellent shunt resistance and excellent responsiveness within the bandwidth range.

Product PN#	product name	Peak wavelength	responsivity
GAP3000/2.2	2.2um extended indium gallium arsenide InGaAs photodiode detector GPD with a diameter of 3mm	2.0 ± 0.1um	@ λP(min/typ)：0.9/1.0A/W	Add Inquiry
GAP3000/2.2	2.2um extended indium gallium arsenide InGaAs photodiode detector GPD with a diameter of 3mm	2.0 ± 0.1um	@ λP(min/typ)：0.9/1.0A/W	Add Inquiry
GAP2000/2.2	2.2um extended indium gallium arsenide InGaAs photodiode detector GPD with a diameter of 2mm	2.0 ± 0.1um	@ λP(min/typ)：0.9/1.0A/W	Add Inquiry

900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type

InGaAs avalanche photodiode (APD) is a specialized device for short wave near-infrared single photon detection, which can meet the technical requirements of high-efficiency and low-noise single photon detection in fields such as quantum communication and weak light detection, achieving single photon detection at wavelengths of 0.9~1.7 μ m.

Product PN#	product name	Spectral response range	responsivity	Other parameters
IGA-APD-GM104-R-TEC	900-1700nm InGaAs Geiger mode avalanche photodiode with built-in TEC cooling type	0.9~1.7μm	@1550nm： 0.85 A/W		Add Inquiry
IGA-APD-GM104-R	900-1700nm InGaAs Geiger mode avalanche photodiode, uncooled type	0.9~1.7μm	@1550nm： 0.85 A/W		Add Inquiry

Indium gallium arsenide InGaAs long wavelength photodiode 2.6 μ m

InGaAs photodiodes are mainly used for near-infrared detection, with characteristics such as high speed, high sensitivity, low noise, and a wide response range (0.5 μ m to 2.6 μ m).

Product PN#	product name	Spectral response	photosensitive area
PLC3000/2.6	900-2600nm indium gallium arsenide InGaAs PIN photodiode with a diameter of 3mm	900-2600 nm	φ3 mm	Add Inquiry
PLC300/2.6	900-2600nm indium gallium arsenide InGaAs PIN photodiode with a diameter of 0.3mm	900-2600 nm	φ3 mm	Add Inquiry
PLC2000/2.6	900-2600nm indium gallium arsenide InGaAs PIN photodiode with a diameter of 2mm	900-2600 nm	φ2 mm	Add Inquiry

1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm

Application areas: Spectral detection and analysis, gas analysis, water content analysis, etc

Product PN#	product name	Photosensitive surface diameter	working wavelength	peak wavelength	Other parameters
PD-InGaAs-300/2600-TO46	1.0~2.6 μ m Extended InGaAs Photodiode	Φ0.3 mm	1.0~2.6 um	2.2 um		Add Inquiry

High speed InGaAs PIN photodiode 600-1750nm TO-39 photosensitive surface 3mm

Marktech's 1346 series is a product line with high sensitivity and reliability, which is very suitable for optical communication equipment. Customers can customize other packaging forms, wavelength sensitivity range: 600nm ~ 1750nm

Product PN#	product name	Sensitivity range	diameter of photosensitive surface	Other parameters
MTPD1346D-300	600-1750nm high-speed InGaAs PIN photodiode TO-39 package	600-1750nm	3mm		Add Inquiry

Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

Mark Technology's 4346 series is a product line with high sensitivity and reliability, which is very suitable for optical communication equipment. This model can also choose customized packaging

Product PN#	product name	Photosensitive surface diameter	spectral response	responsivity	Other parameters
MTPD4346T38-300	600-1750nm indium gallium arsenide quadrant photodiode	3mm	600-1750nm	0.55 A/W @λ=1330nm		Add Inquiry

800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm

800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm is a product series with high sensitivity and reliability, which is very suitable for optical communication equipment. Customers can customize the packaging form.

Product PN#	product name	Sensitivity range	Effective photosensitive surface diameter	Responsiveness
MTPD2601K8-300	800-2600nm high-speed indium gallium arsenide PIN photodiode 3.0mm TO39 sealed dome lens	800-2600nm	3.0mm	1.24A/W	Add Inquiry
MTPD2601K8-150	800-2600nm high-speed indium gallium arsenide PIN photodiode 1.5mm TO39 sealed dome lens	800-2600nm	1.5mm	1.24A/W	Add Inquiry
MTPD2601T8-300	800-2600nm high-speed indium gallium arsenide PIN photodiode 3mm TO39 sealed flat lens	800-2600nm	3mm	1.24A/W	Add Inquiry

900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package

The GESTIN-2TE-TO8 series unit InGaAs detector is mainly composed of P-I-N structure InGaAs photosensitive chip, transition electrode plate, temperature sensor, and two-stage thermoelectric cooler (2TE), and adopts TO packaging form. This user manual only introduces the product series.

Product PN#	product name	Working wavelength	photosensitive surface diameter	packaging
GESTIN-2TE-TO8-3000	900-2700nm InGaAs photodiode two-stage TEC cooling with a diameter of 3mm	900-2700nm	3mm	TO8封装	Add Inquiry
GESTIN-2TE-TO8-2000	900-2700nm InGaAs photodiode two-stage TEC cooling with a diameter of 2mm	900-2700nm	2mm	TO8封装	Add Inquiry
GESTIN-2TE-TO8-0500	900-2700nm InGaAs photodiode two-stage TEC cooling with a diameter of 0.5mm	900-2700nm	0.5mm	TO8封装	Add Inquiry
GESTIN-2TE-TO8-0300	900-2700nm InGaAs photodiode two-stage TEC cooling with a diameter of 0.3mm	900-2700nm	0.3mm	TO8封装	Add Inquiry
GESTIN-2TE-TO8-0300	900-2700nm InGaAs photodiode two-stage TEC cooling with a diameter of 1mm	900-2700nm	1mm	TO8封装	Add Inquiry

900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength

Xiaoxiao Photon has various effective area and packaged PIN junction diodes (PDs) in stock, including indium gallium arsenide (InGaAs), gallium phosphide (GaP), silicon (Si), and germanium (Ge) photodiodes.

Product PN#	product name	Spectral response range	photosensitive surface diameter	responsivity	Other parameters

Indium gallium arsenide InGaAs unit detector SWIR-II type 0.9-1.7um

Indium Gallium Arsenide InGaAs Unit Detector SWIR-II Type 0.9-1.7um Application Fields: Spectral Detection and Analysis, Gas Analysis, Water Content Analysis, etc. Product Features: Positive Illumination Structure, High Sensitivity, Fast Response Time, Internally Integrated Secondary Thermoelectric Refrigerator

Product PN#	product name	Peak wavelength	working wavelength	Other parameters
SWIR-Ⅱ	InGaAs indium gallium arsenide unit detector 0.9-1.7um SWIR-II type	1.55 um	0.9-1.7um		Add Inquiry

P97MXXT2 series unit InGaAs detector 1.7um SWIR two-stage TEC TO package

The P97MXXT2 series unit InGaAs detector is mainly composed of a P-I-N structured InGaAs photosensitive chip, a transition electrode plate, a temperature sensor, and a secondary thermoelectric cooler (TEC), and is packaged in TO form. This user manual only provides instructions for this series of products.

Product PN#	product name	Peak wavelength	spectral response	photosensitive area
P97M30T2-A	950-1650nm Unit InGaAs Detector Secondary TEC Sensitivity Φ 3000um	1550nm	950-1650nm	Φ3000um	Add Inquiry
P97M20T2-A	950-1650nm Unit InGaAs Detector Secondary TEC Sensitivity Φ 2000um	1550nm	950-1650nm	Φ2000um	Add Inquiry
P97M10T2-A	950-1650nm Unit InGaAs Detector Secondary TEC Sensitivity Φ 1000um	1550nm	950-1650nm	Φ1000um	Add Inquiry
P97M05T2-A	950-1650nm Unit InGaAs Detector Secondary TEC Sensitivity Φ 500um	1550nm	950-1650nm	Φ500um	Add Inquiry
P97M03T2-A	950-1650nm Unit InGaAs Detector Secondary TEC Sensitivity Φ 300um	1550nm	950-1650nm	Φ300um	Add Inquiry