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Ge photodiode

Germanium Ge large light sensitive surface PIN photodiode near-infrared 800-1800nm

Xiaoxiao Photon has various effective area and packaged PIN junction diodes (PDs) in stock, including indium gallium arsenide (InGaAs), gallium phosphide (GaP), silicon (Si), and germanium (Ge) photodiodes. We have high-speed silicon photodiodes. There are also high responsivities in the range of 900 to 2600 nm, with detection wavelengths exceeding the typical indium gallium arsenide photodiode's 1800 nm. A dual band photodiode integrates two photodetectors tightly attached to each other (with a silicon substrate on top and an indium gallium arsenide substrate on bottom), with a combined wavelength range from 400 to 1700 nm. In order to enrich our photodiode product line, we provide installed photodiodes for customers to use immediately. Uneven edges of the detector's effective area may cause unnecessary capacitance and resistance effects, thereby distorting the time-domain response of the photodiode. Therefore, we suggest placing the light incident at the center of the effective area. For this, a focusing lens or pinhole can be placed in front of the detector.

Product PN#	product name	Spectral response range	photosensitive surface diameter	responsivity	Other parameters
GE-10X10-TO9	Ge germanium ultra large photosensitive PIN photodiode (800-1800nm diameter 10mm)	800-1800nm	10mm	@1550nm 0.85 A/W		Add Inquiry
GE-5X5-TO8	Ge germanium large photosensitive PIN photodiode (800-1800nm diameter 5mm)	800-1800nm	5mm	@1550nm 0.85 A/W		Add Inquiry