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Si Amplified Photodetector

Silicon Si amplification photodetector 320-1100nm (DC-5MHz/200kHz)

A photodetector is a type of photodetector with a rated bandwidth and fixed gain, used for detecting optical signals. The optical signal is input from the sensing surface of the photoelectric sensor and output in the form of voltage through BNC. This product can measure optical signals in the wavelength range of 800nm to 1700nm. Please refer to the attached table for specific performance parameter data. The LD-PD photodetector housing comes with a 1/4 "-20 inch threaded mounting hole for easy installation and fixation. The housing also comes with two different sizes of threaded couplings, which are suitable for industrial and scientific applications, and can be easily adapted to external optical components such as filters, attenuators, lenses, FC fiber optic adapters, etc. This product includes a plastic dust cover. Please refer to Chapter 3 for specific installation instructions. Each photodetector is equipped with a DC linear power supply with an output of ± 9V, and the rated input voltage of this DC power supply is 220VAC/50Hz.

Product PN#	product name	Photosensitive surface	wavelength	bandwidth
PDA25A4B8G-VIS	400-1100nm silicon Si photodetector with amplification fixed gain (DC-20KHz)	2.5mm*2.5mm	400-1100nm	DC - 20KHz	Add Inquiry
PDA25A6B4G-VIS	400-1100nm silicon Si photodetector with amplification fixed gain (DC-5MHz)	2.5mm*2.5mm	400-1100nm	DC - 5MHz	Add Inquiry
PDA12A7B4G-VIS	400-1100nm silicon Si photodetector with amplification fixed gain (DC-50MHz)	1.2mm*1.2 mm	400-1100nm	DC-50MHz	Add Inquiry
PDA12A8B4G-VIS	400-1100nm silicon Si photodetector with amplification fixed gain (DC-140MHz)	1.2mm*1.2mm	400-1100nm	DC-140MHz	Add Inquiry
PDAM36A5B6G-SI	320-1100nm silicon Si amplification photodetector (DC-200kHz)	3.6mm*3.6mm	320-1100nm	DC-200kHz	Add Inquiry
PDAM005B-Si	400-1100nm silicon Si amplification photodetector (DC-5MHz)	2.65mm*2.65mm	400-1100 nm	DC-5MHz	Add Inquiry

Silicon Si compatible 30mm cage system silicon photodiode detection module 320-1100nm LightCap C3A

The C3A series photoelectric detection module integrates photodiodes, amplification circuits, and power conditioning circuits into a miniaturized module. Not only suitable for the construction of various laboratory optical systems, but also for integration in user products. The module is easy to install and can achieve sealing of the optical path. The module can operate with a wide range of positive and negative power sources, and contains a linear rectification circuit inside to reduce input noise and improve signal-to-noise ratio. Different types, sizes, and speeds of photodiodes can be selected within the series, such as Si or InGaAs. The typical output characteristic of a module using a 1 mm2 silicon photodiode is ± 3V, 0-25MHz (with positive and negative 5V power supply).

Product PN#	product name	Spectral response	Sensitivity specification	Responsiveness	Other parameters
C3A-S1010	320-1100nm Si silicon photodetector module with a diameter of 1.2mm	320-1100nm	1.2mm	0.45A/W @660nm 0.55A/W @830nm		Add Inquiry

Silicon Si Avalanche Unit Detector APD Series 400-1100nm

The Si avalanche unit detection module integrates low-noise APD detector, low-noise broadband transimpedance amplifier, ultra-low noise isolation power supply, high voltage power supply, and APD temperature compensation; Isolate the power supply to ensure that the output signal is not affected by external power supply; APD temperature compensation improves the stability of the detection module. Avalanche photodetectors have the characteristics of high gain, high sensitivity, high bandwidth, and low noise

Product PN#	product name	Wavelength	Bandwidth	Detector Responsiveness
APD-100M-B-FC/APC	Si avalanche unit detector 100MHz 400-1100nm FC/APC	400-1100nm	100MHz	25A/W@850nm	Add Inquiry
APD-200M-B-FC/APC	Si avalanche unit detector 200MHz 400-1100nm FC/APC	400-1100nm	200MHz	25A/W@850nm	Add Inquiry
APD-300M-B-FC/APC	Si avalanche unit detector 300MHz 400-1100nm FC/APC	400-1100nm	300MHz	25A/W@850nm	Add Inquiry
APD-400M-B-FC/APC	Si avalanche unit detector 400MHz 400-1100nm FC/APC	400-1100nm	400MHz	25A/W@850nm	Add Inquiry
APD-500M-B-FC/APC	Si avalanche unit detector 500MHz 400-1100nm FC/APC	400-1100nm	500MHz	25A/W@850nm	Add Inquiry
APD-1G-B-FC/APC	Si avalanche unit detector 1GHz 400-1100nm FC/APC	400-1100nm	1GHz	25A/W@850nm	Add Inquiry
APD-2G-B-FC/APC	Si avalanche unit detector 2GHz 400-1100nm FC/APC	400-1100nm	2GHz	25A/W@850nm	Add Inquiry

200-1100nm silicon amplification photodetector with fixed gain

Xiaoxiao Photon's silicon amplification photodetector has a photosensitive range covering 200nm~1100nm, a fixed gain, and can achieve quantitative photoelectric conversion. It has sufficient gain while ensuring high bandwidth performance, and is suitable for the development of optoelectronic detection applications with strong or weak light and fast speed. It has excellent performance, high cost-effectiveness, and provides comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.

Product PN#	product name	Material	Sensitivity Range	Sensitivity Size	Bandwidth Range
PDSAF2B10	200-1100nm silicon amplification photodetector with a fixed gain of 1.0mm	硅	200-1100nm	Φ1.0mm	DC～150MHz	Add Inquiry
PDSAF4F015	400-1000nm silicon amplification photodetector with fixed gain of Φ 150um	硅	400-1000nm	Φ150um	DC～380MHz	Add Inquiry
PDSAF3D11	320-1100nm silicon amplification photodetector with fixed gain of 1.1mm × 1.1mm	硅	320-1100nm	1.1mm×1.1mm	DC～20MHz	Add Inquiry
PDSAF3C8	320-1000nm silicon amplification photodetector with a fixed diameter of 0.8mm	硅	320-1000nm	Φ0.8mm	DC～50MHz	Add Inquiry

Silicon amplification photodetector

Xiaoxiao Photon's silicon-based amplification photodetector covers a photosensitive range of 350-1100nm, with a programmable 8-speed adjustable gain that can achieve quantitative photoelectric conversion. It has a wide dynamic range and is suitable for various photoelectric development scenarios. The 100% device is produced nationwide, with excellent performance and high cost-effectiveness. It provides comprehensive technical support and is commonly used in visible light and near-infrared light measurements.

Product PN#	product name	Material	Sensitivity Range	Sensitivity Size	Bandwidth Range
PDSAA3E36C	350-1100nm silicon amplification photodetector (produced nationwide) 3.6 × 3.6mm	硅	350-1100nm	3.6×3.6mm	DC～6.7MHz	Add Inquiry
PDSAA1A36	190-1100nm silicon amplification photodetector 3.6 × 3.6mm	硅	190-1100nm	3.6×3.6mm	DC～12MHz	Add Inquiry
PDSAA1A98	190-1100nm silicon amplification photodetector with a diameter of 9.8mm	硅	190-1100nm	Φ9.8mm	DC～11MHz	Add Inquiry
PDSAA3D98	320-1100nm silicon amplification photodetector with a diameter of 9.8mm	硅	320-1100nm	Φ9.8mm	DC～11MHz	Add Inquiry
PDSAA3E36	350-1100nm silicon amplification photodetector 3.6 × 3.6mm	硅	350-1100nm	3.6×3.6mm	DC～12MHz	Add Inquiry