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1550nm indium gallium arsenide InGaAs high-sensitivity and large photosensitive element APD chip four quadrant avalanche detection and receiving module
1550nm indium gallium arsenide InGaAs high-sensitivity and large photosensitive element APD chip four quadrant avalanche detection and receiving module
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Part Number
GD4516YB
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Main parameter


测试条件:TA=22±3℃,VEE=-5V,VCC=5V,VAPD=VBR-3V,λ= 1.55μm。

参数名称

Min. 值

典型值

Max. 值

单位

工作波长

-

1550

-

nm

光敏面直径

-

800

-

um

象限间隔

-

50

-

um

-3dB 带宽

-

2

-

MHz

Max. 线性输出电压幅度

-

3

-

Vpp

交流串扰

-

-

5%

-

电压响应度

5

-

-

MV/W

增益一致性

-

-

5%


输入等效噪声功率@2M

-

-

0.15

pW/√Hz

 

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