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1550nm indium gallium arsenide InGaAs high sensitivity and high photosensitivity four quadrant PD chip detection and reception module
1550nm indium gallium arsenide InGaAs high sensitivity and high photosensitivity four quadrant PD chip detection and reception module
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Part Number
GD4516YA
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Main parameter


测试条件:TA=22±3℃,VEE=-5V,VCC=5V,VAPD=VBR-3V,λ= 1.55μm。

参数名称

Min. 值

典型值

Max. 值

单位

工作波长

-

1550

-

nm

光敏面直径

-

1200

-

um

象限间隔

-

12

-

um

-3dB 带宽

-

2

-

MHz

Max. 线性输出电压幅度

-

3

-

Vpp

交流串扰

-

-

5%

-

电压响应度

500

-

-

MV/W

增益一致性

-

-

5%


输入等效噪声功率@2M

-

-

0.8

pW/√Hz

 

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