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Indium Gallium Arsenide InGaAs Optoelectronic Balance Detector MBD-A Series 800-1700nm >

InGaAs Optoelectronic Balance Detector MBD-800M-A

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Part Number

MBD-800M-A

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Main parameter

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Main Parameters

Wavelength	Bandwidth
800-1700nm	800M

Dimensional Drawing

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产品型号	MBD-100M-A	MBD-200M-A	MBD-300M-A	MBD-400M-A	MBD-500M-A	MBD-800M-A	MBD-1G-A	MBD-1.5G-A	MBD-2G-A	MBD-2.5G-A	单位
探测器类型	InGaAs
波长	800~1700										nm
带宽	100M	200M	300M	400M	500M	800M	1G	1.5G	2G	2.5G	Hz
探测器响应度	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	A/W@1550nm
跨阻增益	30K	30K	30K	10K	5K	30K	30K	30K	15K	15K	V/A
Max. 输入光功率	140	140	140	420	840	140	140	140	280	280	μW
NEP	5	5	5	7	7	9	9	9	9	9	pW/Sqrt(Hz)
输出阻抗	50	50	50	50	50	50	50	50	50	50	Ω
输出耦合方式	DC/AC	DC/AC	DC/AC	DC/AC	DC	AC	AC	AC	AC	DC
供电电压	5	5	5	5	5	12	12	12	12	12	V
供电电流	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	A
光学输入	FC/APC（自由空间光可选）
射频输出	SMA
外形尺寸	624725					755525					mm