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Indium gallium arsenide InGaAs butterfly shaped package low-noise optoelectronic balanced detector 1100~1700nm
Indium gallium arsenide InGaAs butterfly shaped package low-noise optoelectronic balanced detector 1100~1700nm
Unit Price
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Part Number
XBD-200M-60K-A
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Main parameter


参数表

型号

XBD-200M-60K-A

参数

范围

单位

波长

1100~1700

nm

带宽

200

MHz

探测器响应度

0.95@1550nm

Aw

探测器类型

lnGaAs

跨阻增益*1

60K

v/A

饱和输入光功率

60

uw

NEP

5

pW/Sqrt(Hz)

输出阻抗

50


共模抑制比

>25

dB

输出耦合方式*2

AC/DC

供电电压

5

v

供电电流

0.2(max)

A

外形尺寸

蝶形封装


光学输入

FC/APC

射频输出

MCX

 

*1:表中给出的是常规放大倍数,其它放大倍数可以根据客户需求进行定制;

*2:耦合方式可以根据客户需求来确定;

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