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InGaAs avalanche optoelectronic balanced detector BAPD-300M-A
Unit Price
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Part Number
BAPD-300M-A
Lead Time
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Stock
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Main parameter

产品型号

BAPD-100M-A

BAPD-200M-A

BAPD-300M-A

BAPD-400M-A

BAPD-500M-A

BAPD-600M-A

BAPD-800M-A

BAPD-1G-A

BAPD-1.2G-A

BAPD-1.5G-A

BAPD-2G-A

BAPD-2.5G-A

单位

探测器类型

InGaAs


波长

800~1700

nm

带宽

100M

200M

300M

400M

500M

600M

800M

1G

1.2G

1.5G

1.5G

2.5G

Hz

探测器响应度

9

9

9

9

9

9

9

9

9

9

9

9

A/W@1550nm

跨阻增益

300K

300K

300K

100K

50K

50K

300K

300K

300K

200K

150K

150K

V/W

饱和光功率

13

13

13

39

78

78

13

13

13

20

20

20

uW

输出阻抗

50

50

50

50

50

50

50

50

50

50

50

50

Ω

NEP

0.46

0.46

0.46

0.46

0.46

0.46

0.46

0.46

0.46

0.46

0.46

0.46

pW/√(Hz)

输出耦合方式

 

DC/AC

 

DC/AC

 

DC/AC

 

DC/AC

 

DC

 

AC

 

AC

 

AC

 

AC

 

AC

 

AC

 

AC


供电电压

5

5

5

5

5

5

12

12

12

12

12

12

V

供电电流

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

A

光学输入

FC/APC(自由空间光可选)


射频输出

SMA


外形尺寸

80*90*25

mm

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