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2.2um extended indium gallium arsenide InGaAs photodiode detector GPD with a diameter of 2mm
2.2um extended indium gallium arsenide InGaAs photodiode detector GPD with a diameter of 2mm
Unit Price
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Part Number
GAP2000/2.2
Lead Time
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Stock
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Main parameter


电学参数@ 23℃ ± 2℃

参数

GAP2000/2.2

GAP3000/2.2

单位

有效直径

2

3

mm

峰值波长(典型)

2.0 ± 0.1

2.0 ± 0.1

um

截止波长 (50%)

2.2 ± 0.1

2.2 ± 0.1

µm

响应度P(min/typ)

0.9/1.0

0.9/1.0

A/W

分流电阻 (min/typ)

6k/10k

2k/6k

Ω

暗电流(max)

40 @ 1 V

100 @ 1 V

µA

电容 (typ) @ 0 V

4000

8000

pF

带宽w/50Ω @ 0 V (typ)

0.795

0.397

MHz

上升时间w/50Ω@ 0 V (typ)

440

881

ns

NEP @ λPEAK (typ)

128 x 10-14

287 x 10-14

W/Hz1/2

线性度 (± 0.2dB @ 0 V)

6

6

dBm

封装

TO-5

TO-5


 

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