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Ge germanium ultra large photosensitive PIN photodiode (800-1800nm diameter 10mm)
Ge germanium ultra large photosensitive PIN photodiode (800-1800nm diameter 10mm)
Unit Price
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Part Number
GE-10X10-TO9
Lead Time
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Stock
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Main parameter

产品规格

探测材料

Ge

响应波长

800 - 1800 nm

峰值波长

1550 nm   (Typ.)

响应度

0.85 A/W (Typ.)

光敏面直径

78.5 mm2 (Ø10mm)

上升/下降沿时间 (RL =   50 Ohms, 10 V)

500 ns / 500 ns   (Typ.)

NEP, Typical (1550 nm)

4.0 x   10-12  W/Hz1/2 (Typ.)

暗电流 (5 V)

60 µA (Max.)

电容(10 V)
  电容(0 V)

1800 pF   (Max.)
  16000 pF (Max.)

分流电阻

4000 Ohm (Typ.)

封装形式

TO-9

最大额定值

最大击穿打压

10 V

操作温度

-55 to 60 °C

存储温度

-55 to 60   °C

 

备注:1、典型值;RL = 50 Ω,除非另有说明

            2、NEP指Ding在光伏模式下

 

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