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Indium gallium arsenide InGaAs unit detector PD series 800~1700nm >

InGaAs Unit Detector PD-100M-A

InGaAs Unit Detector PD-100M-A

Unit Price

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Part Number

PD-100M-A

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Main parameter

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产品型号	PD-100M-A	PD-200M-A	PD-300M-A	PD-400M-A	PD-500M-A	PD-600M-A	PD-800M-A	PD-1G-A	PD-1.2G-A	PD-1.5G-A	PD-2G-A	PD-2.5G-A	PD-5G-A	单位
探测器类型	InGaAs
波长	800~1700													nm
带宽	100M	200M	300M	400M	500M	600M	800M	1G	1.2G	1.5G	2G	2.5G	5G	Hz
探测器响应度	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	0.95	A/W@1550nm
跨阻增益	30K	30K	30K	10K	5K	5K	30K	30K	30K	20K	15K	15K	3K	V/A
饱和光功率	140	140	140	420	840	840	140	140	140	210	280	280	1400	μW
NEP	5	5	5	7	7	8	9	9	9	9	9	9	9	pW/Sqrt(Hz)
输出阻抗	50	50	50	50	50	50	50	50	50	50	50	50	50	Ω
输出耦合方式	DC/AC	DC/AC	DC/AC	DC/AC	DC/AC	DC	AC	AC	AC	AC	AC	AC	AC
供电电压	5	5	5	5	5	5	12	12	12	12	12	12	12	V
供电电流	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.3(max)	0.2(max)	0.2(max)	0.2(max)	0.2(max)	0.2(max)	0.2(max)	0.2(max)	A
光学输入	FC/APC（自由空间光可选）
射频输出	SMA
外形尺寸	655020												755525	mm

使用说明

1.该模块供电电压为5V，供电电流最大值为0.25A.

2. Input 为光输入接口; RF为射频输出接口.

3.接入输入端前请确保端面清洁防止脏污对测量结果造成影响.

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