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400-1100nm silicon Si photoelectric balance detector 200MHz
400-1100nm silicon Si photoelectric balance detector 200MHz
Unit Price
Please contact customer service for a discounted quote.
Part Number
BPD-Si-200M-B
Lead Time
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Stock
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Main parameter

产品型号

BPD-Si-100M-B

BPD-Si-200M-B

BPD-Si-350M-B

BPD-Si-500M-B

BPD-Si-1G-B

单位

探测器型号

Si

波长

400~1100

400~1100

400~1100

400~1100

400~1100

nm

带宽

100M

200M

350M

500M

1G

Hz

探测器响应度

0.55@850nm

0.55@850nm

0.55@850nm

0.55@850nm

0.55@850nm

A/W

跨阻增益

30K

30K

30K

30K

30K

V/A

饱和输入光功率

250

250

250

250

250

μW

NEP

12

12

12

13

13

pW/Sqrt(Hz)

共模抑制比

>25

>25

>25

>25

>25

dB

输出阻抗

50

50

50

50

50

Ω

输出耦合方式

DC/AC

DC/AC

DC/AC

AC

AC


供电电压

5

5

5

12

12

V

供电电流

0.5(max)

0.5(max)

0.5(max)

0.5(max)

0.5(max)

A

光学输入

FC/APC(自由空间可选)

FC/APC(自由空间可选)

FC/APC(自由空间可选)

FC/APC(自由空间可选)

FC/APC(自由空间可选)


射频输出

SMA

SMA

SMA

SMA

SMA


外形尺寸

62*47*25

62*47*25

62*47*25

62*47*25

62*47*25

mm


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