|
info@idealphotonics.com
search
Home > 
Indium Arsenide InAs Photoimmersion Infrared Photovoltaic Detector with Two Stage TE Cooling 2-5.5um
Indium Arsenide InAs Photoimmersion Infrared Photovoltaic Detector with Two Stage TE Cooling 2-5.5um
Unit Price
Please contact customer service for a discounted quote.
Part Number
PVIA-2TE-3-1×1-TO8-wAl2O3-36
Lead Time
Please contact customer service for lead time.
Stock
Please contact customer service for stock availability.
Add to Inquiry
Inquire online
Main parameter

参数

探测器型号

PVIA-2TE-3

PVIA-2TE-5

有源元件材料

外延InAs异质结构

外延InAsSb异质结构

起始波长λcut-on (10%), μm

2.1±0.2

2.4±0.2

峰值波长λpeak(μm)

2.9±0.3

4.7±0.3

截止波长λcut-off (10%), μm

3.4±0.2

5.5±0.2

相对响应强度D* (λpeak),cm·Hz1/2/W

≥5×1011

≥4×1010

电流响应度Ri(λpeak),A/W

≥1.3

≥1.5

时间常数T,ns

≤15

≤5

电阻R,Ω

≥200K

≥1K

元件工作温度Tdet,K

~230

感光面尺寸A,mm×mm

1×1

封装

TO8

接收角Φ

~36°

窗口

wAl2O3

 

Product Recommendation