900-1800nm InGaAs Large Active Area PIN Photodiode

Idealphotonics stocks a variety of PIN junction photodiodes (PD) with different active areas and packages, including Indium Gallium Arsenide (InGaAs), Gallium Phosphide (GaP), Silicon (Si), and Germanium (Ge) photodiodes. We offer high-speed silicon photodiodes, as well as photodetectors with high responsivity in the 900–2600 nm range, extending beyond the typical 1800 nm detection limit of standard InGaAs photodiodes. Additionally, we provide dual-band photodiodes that integrate two closely stacked photodetectors (silicon on top, InGaAs on the bottom), covering a combined wavelength range from 400 to 1700 nm. To enhance our photodiode product line, we offer pre-mounted photodiodes for convenient plug-and-play use. The non-uniformity at the edges of the detector's active area may cause unwanted capacitance and resistance effects, distorting the photodiode’s time-domain response. Therefore, we recommend directing the incident light to the center of the active area. This can be achieved by placing a focusing lens or a pinhole in front of the detector.

Product features：10mm Ultra-Large Active Area 、Spectral Response: 900nm to 1700nm 、High Linearity > 10 dBm 、Front-Illuminated Planar Chip Structure 、Large Photosensitive Area, Low Dark Current

Application area：Laser Power Meter 、LED/LD Aging Diagnostics 、Spectroscopy 、LED/LD Characteristics 、Eye-Safe Laser Detection Sensors

Unit Price

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Part Number

IRD-IGS-10

Lead Time

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Stock

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General Parameters

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Dimensional Drawing

Parameters

Parameters	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Spectral Response Range	λ	—	900～1700			nm
Photosensitive Area Diameter	φ	—	10			mm
Responsivity Response Time	Re	VR=5V,λ=1.31μm,φe=100μw	0.85	—	—	A/W
Responsivity Response Time	Re	VR=5V,λ=1.55μm,φe=100μw	0.95	—	—	A/W
Total Capacitance	tS	VR=5V,RL=50Ω,f=2KHz	—	8	20	μs
Dark Current	C	VR=5V,f=1KHz	—	3	10	nF
Shunt Impedance	ID	VR=5V,φe=0	—	25	100	nA
Spectral Response Range	Rsh	VR=10mV	10	—	—	MΩ

Spectrum Response Curve

Limit value

Parameter	Symbol	Rated Value	Unit
Operating Temperature	TC	-40～+85	℃
Storage Temperature	TSTG	-55～+125	℃
Forward Current	IF	10	mA
Reverse Current	IR	5	mA
Soldering Temperature (Time)	St	260℃（10s）	-

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