Ge Germanium Ultra-large photosensitive PIN photodiode (800-1800nm diameter 10mm)

Idealphotonics stocks PIN junction diodes (PDs) with various active areas and packages, including indium gallium arsenide (InGaAs), gallium phosphide (GaP), silicon (Si) and germanium (Ge) photodiodes. We have high-speed silicon photodiodes. There are also high responsivities in the range of 900 to 2600 nm, and the detection wavelength exceeds the 1800 nm of typical indium gallium arsenide photodiodes. Dual-band photodiodes, which integrate two photodetectors close together (silicon substrate on top, indium gallium arsenide substrate on the bottom), have a combined wavelength range from 400 to 1700 nm. In order to enrich our photodiode product line, we provide mounted photodiodes for customers to power and use. The non-uniformity of the edge of the detector's active area may cause unwanted capacitance and resistance effects, thereby distorting the time domain response of the photodiode. Therefore, we recommend that the light be incident on the center of the active area. To this end, a focusing lens or pinhole can be placed in front of the detector.

Product features：Small and large photosensor areas available (100µm to 25mm)、 800nm to 1800nm spectral response、 High linearity > 10 dBm、 Customizable lens combinations (Biconvex, Planoconvex, or Ball)、 Available packaging options (TO-46, TO-18, TO-5, TO-8, TO-9 or BNC)

Application area：Laser power meter、 LED/ LD aging diagnostics、 Spectroscopy、 LED/ LD characteristics、 Eye-safe laser detection sensor

Unit Price

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Part Number

GE-10X10-TO9

Lead Time

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General Parameters

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Dimensional Drawing

Parameter

Specification
Detection material	Ge
Response wavelength	800 - 1800 nm
Peak wavelength	1550 nm (Typ.)
Responsivity	0. 85 A/ W (Typ.)
Photosensitive surface diameter	78. 5 mm² (Ø10mm)
Rise/fall time (RL = 50 Ohms, 10 V)	500 ns / 500 ns (Typ.)
NEP, Typical (1550 nm)	4. 0 x 10-12 W/ Hz1/ 2 (Typ.)
Dark current (5 V)	60 µA (Max. )
Capacitance (10 V) Capacitance (0 V)	1800 pF (Max. ) 16000 pF (Max. )
Shunt resistor	4000 Ohm (Typ.)
Package type	TO-9
Package method
Maximum breakdown pressure	10 V
Operating temperature	-55 to 60 ° C
Storage temperature	-55 to 60 ° C

Notes 1. Typical values; RL = 50 Ω, unless otherwise specified

2. NEP specifies in photovoltaic mode

Spectral response curve

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