Wavelength Range

350-1100nm

190-1100n m

320-1100n m

190-1100nm

Sensitive Area

3.6mm×3.6mm

Φ9.8mm

Response Time Constant

10ns

0.5us

35ns

3us

Bandwidth Range

DC ～12MHz

DC ～11MHz

Gain Range

Hi-Z Load: 0.51kV/A ~ 4.75MV/A; 50Ω Load: 0.75kV/A ~ 2.38MV/A

Signal Amplitude

Hi-Z Load: 0 ~ 10V; 50Ω Load: 0 ~ 5V

Gain Adjustment

Rotatable dial adjustment: 0~70dB, 10dB per step, 8 steps. Bandwidth inversely proportional to gain.

Sensitive Depth

0.13"  (3.3  mm)

Detector Weight

0.10kg

Operating Temperature

10-40℃

Storage Temperature

-20-70℃

Dimensions

2.79" X 2.07" X 0.89"  (70.9  mm X     52.5  mm X  22.5  mm)

NEP

3.25~75.7 pW/Hz^1/2

2.12~69.7p W/Hz^1/2

2.67~71.7p W/Hz^1/2

1.33~45.1pW/Hz^1/2

Power Supply Interface

Power Switch

Signal Interface

Gain Adjustment

Mounting Interface

Optical Interface

LUMBERG  RSMV3  FE MALE

SlideSwitch with LED Indicator

BNC Female

8-step rotary knob

M4 X 2

SM1 X  1

SM0.5 X  1

Gain (Hi-Z)

1.51× 103V/ A

Gain (Hi-Z)

4.75× 10³V /A

Gain (Hi-Z)

1.5 × 10⁴V/ A

Gain (Hi-Z)

4.75× 10⁴ V/A

Gain (50Ω)

0.75× 103V/ A

Gain (50Ω)

2.38× 10³V /A

Gain (50Ω)

0.75× 10⁴V /A

Gain (50Ω)

2.38× 10⁴ V/A

Bandwidth (BW)

12MHz

Bandwidth (BW)

1.6MHz

Bandwidth (BW)

1MHz

Bandwidth (BW)

260kHz

Noise (RMS)

258uV

Noise (RMS)

192uV

Noise (RMS)

207uV

Noise (RMS)

211uV

40dB

50dB

60dB

70dB

Gain (Hi-Z)

1.51× 10⁵V/

Gain (Hi-Z)

4.75× 10⁵V

Gain (Hi-Z)

1.5 × 10⁶V/

Gain (Hi-Z)

4.75× 10⁶

A

/A

A

V/A

Gain (50Ω)

0.75× 10⁵V/ A

Gain (50Ω)

2.38× 10⁵V /A

Gain (50Ω)

0.75× 10⁶V /A

Gain (50Ω)

2.38× 10⁶ V/A

Bandwidth (BW)

90MHz

Bandwidth (BW)

28MHz

Bandwidth (BW)

9kHz

Bandwidth (BW)

3kHz

Noise (RMS)

214uV

Noise (RMS)

234uV

Noise (RMS)

277uV

Noise (RMS)

388uV

Signal Offset

±8mV(Typ.) ， ±12mV(Max)

Product Name

Material

Type

Features

Wavelength Range Sensitive Area Size

Optional Configuration

PD:"Photodetector"

S: Si Silicon-based

A: Amplifying Type

A: Adjustable Gain

1A36：190-1100nm ，3.6 ×3.6

mm

1A98：190-1100nm，Φ9.8mm

3D98：320-1100nm，Φ9.8mm

3E36：350-1100nm ，3.6 ×3.6

mm

PDSAA1A36

A80153413

190-1100nm Silicon-based Amplified Photodetector, Sensitive Area: 3.6 × 3.6mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 12MHz

PDSAA1A98

A80153414

190-1100nm Silicon-based Amplified Photodetector, Sensitive Area: Φ9.8mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 11MHz

PDSAA3D98

A80153415

320-1100nm Silicon-based Amplified Photodetector, Sensitive Area: Φ9.8mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 11MHz

PDSAA3E36

A80153416

350-1100nm Silicon-based Amplified Photodetector, Sensitive Area: 3.6 × 3.6mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 12MHz