Photoelectric detector C3A-2700LAE Parameter
Parameter | Value |
Photodetector | InGaAS Extended Indium Gallium Arsenide Detector |
Photosensitive surface size | Φ2mm |
Optical window | Plane borosilicate glass |
Response wavelength range | 1000-2600nm |
Peak wavelength | 2000nm |
Relative response intensity | 75% @1550nm,100@2000nm |
Directivity | ±40º |
NEP | 6*10-15 W/Hz1/2 |
Operating bandwidth | 50MHZ |
Transimpedance gain | 50kV/A @ 0dB Gain;500kV/A @20dB Gain |
Output voltage range | 0~+3V (into Hi-Z);0~+1.5V (into 50Ω) |
Output impedance | 50Ω |
Input operating voltage | V+: +5 ~ +20V;V- : -5 ~ -20V |
Operating temperature | 10~50 ºC |
Maximum pressure difference | ±50kPa |
Response spectrum
Installation example
Recommended mounting hole diameter
Use the two guide rails to precisely position the sensor. Secure the position with four M6 screws.
(All dimensions in mm)