800-2200nm infrared extended InGaAs amplified photodetector, response time constant 35ns

Idealphotonics' infrared extended InGaAs amplified photodetector has a sensitivity range of 800nm~2600nm, 8 levels of adjustable gain, can achieve quantitative photoelectric conversion, and has a wide dynamic range. It is suitable for various optoelectronic development scenarios, has excellent performance, and is cost-effective. It provides all-round technical support and is often used in near- and mid-infrared light measurement.

Product features：The photosensitive range covers 800nm~2600nm, which is often used for near-mid-infrared light measurement、 Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion、 Wide dynamic range, suitable for various infrared photoelectric development scenarios、 Excellent performance, high cost performance, omnidirectional technical support、 Provide non-standard customization services

Application area：Near and mid-infrared light measurement

Unit Price

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Part Number

PDJAA8L10

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Stock

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General Parameters

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Dimensional Drawing

Parameter

Parameters	Value
Wavelength range	800-2600nm	800-2200nm
Response time constant	25ns	35ns		200ns
Gain range	Hi-Z load ：1.51kV/A～4.75MV/A；50Ω load ：0.75kV/A～2.38MV/A
Signal amplitude	Hi-Z load ：0 ～10V；50Ωload ：0～5V
Gain adjustment method	Rotary gear adjustment: 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain.
NEP	1.0 × 10^-12W/Hz^1/2	1.0 × 10^-13W/Hz^1/2		2.5 × 10^-14W/Hz^1/2
Photosensitive size	1mm×1mm	1mm×1mm		2mm×2mm
Photosensitive surface depth	0.13" (3.3 mm)
Detector net weight	0.10kg
Operating temperature	10-40℃
Storage temperature	-20-70℃
Appearance size	2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
Power supply interface	Power switch	Signal interface	Gain Adjustment	Support rod interface	Optical interface
LUMBERG R SMV3 FEMA LE	Slide switch With LED indicator	BNC female socket	8-position knob	M4 ×2	SM1 × 1 SM0.5 × 1

Eight-level quantitatively adjustable gain parameters

0dB		10dB		20dB		30dB
Gain (Hi-Z)	1.51× 10³V /A	Gain (Hi-Z)	4.75× 10³V /A	Gain (Hi-Z)	1.5 × 10⁴V/ A	Gain (Hi-Z)	4.75× 10⁴ V/A
Gain (50Ω)	0.75× 10³V /A	Gain (50Ω)	2.38× 10³V /A	Gain (50Ω)	0.75× 10⁴V /A	Gain (50Ω)	2.38× 10⁴ V/A
Bandwidth (BW)	13MHz	Bandwidth (BW)	1.7MHz	Bandwidth (BW)	1.1MHz	Bandwidth (BW)	300kHz
Noise (RMS)	≤258uV	Noise (RMS)	≤250uV	Noise (RMS)	≤250uV	Noise (RMS)	≤250uV
40dB		50dB		60dB		70dB
Gain (Hi-Z)	1.51× 10⁵V /A	Gain (Hi-Z)	4.75× 10⁵V /A	Gain (Hi-Z)	1.5 × 10⁶V/ A	Gain (Hi-Z)	4.75× 10⁶ V/A
Gain(50Ω)	0.75× 10⁵V /A	Gain(50Ω)	2.38× 10⁵V /A	Gain(50Ω)	0.75× 10⁶V /A	Gain(50Ω)	2.38× 10⁶ V/A
Bandwidth (BW)	90kHz	Bandwidth (BW)	28kHz	Bandwidth (BW)	9kHz	Bandwidth (BW)	3kHz
Noise (RMS)	≤250uV	Noise (RMS)	≤250uV	Noise (RMS)	≤300uV	Noise (RMS)	≤400uV
Signal offset	±8mV(Typ.) ， ± 12mV(Max)

Response Curve

图片9.png

Product Configuration

Appendix 1: Optional Configuration Table

Infrared Extended InGaAs Amplified Photodetector	Optional Configuration
Product Name	Material	Type	Features	Wavelength range Photosensitive size	Reserve optional configuration
PD: "Photodetectors"	J：InGaAs	A：Amplified	A：Adjustable gain	8M10 ：800-2600nm ，1mm × 1mm
				8L10 ：800-2200nm ，1mm× 1mm
				8L20 ：800-2200nm ，2mm× 2mm

Appendix 2: Model and Part Number Comparison Table

PN#	Stock#	Specifications
PDJAA8M10	A80153457	800-2600nm infrared extended InGaAs amplified photodetector, photosensitive size 1mm×1mm, 0～70dB eight-level quantitative adjustable gain, response time constant 25ns
PDJAA8L10	A80153458	800-2200nm infrared extended InGaAs amplified photodetector, photosensitive size 1mm×1mm, 0～70dB eight-level quantitative adjustable gain, response time constant 35ns
PDJAA8L20	A80153459	800-2200nm infrared extended InGaAs amplified photodetector, photosensitive size 2mm×2mm, 0～70dB eight-level quantitative adjustable gain, response time constant 200ns

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