Φ0.3~3mm 900-2700nm Two-stage TEC InGaAs Photodiode TO8 Package

The GESTIN-2TE-TO8 series unit InGaAs detector is mainly composed of a P-I-N structure InGaAs photosensitive chip, a transition electrode plate, a temperature sensor and a two-stage thermoelectric cooler (2TE), and adopts a TO package. This user manual only introduces the product series.

Product features：Chip effective diameter from 300μm to 3000μm、 Spectral response from 900nm to 2700nm、 High shunt resistance for high sensitivity、 TEC built-in

Application area：Near infrared sensing/radiometry、 LED/LD characteristics、 Spectroscopy、 Medical diagnostics、 Spectroscopy

Unit Price

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Part Number

GESTIN-2TE-TO8-2000

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General Parameters

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Dimensional Drawing

Main Parameters:

E/O characteristics

Structural parameters

Part Number	Package	cool	Active area	Chip size	Electrode size
GESTIN-2TE-TO8 -0300	TO-8	2TE	Φ300μm	850×850um	140× 180um
GESTIN-2TE-TO8 -0500			Φ500μm	1000× 1000um	140× 180um
GESTIN-2TE-TO8 -1000			Φ1000μm	1410× 1410um	140× 180um
GESTIN-2TE-TO8 -2000			Φ2000μm	2560×2560um	280×360um
GESTIN-2TE-TO8 -3000			Φ3000μm	3560×3560um	320×480um

EO parameters

Part Numbe r	Test temperature Tch (℃)	Spectral response λ (nm)	Dark Current ID( μA)		Junction Capacit y (Junction capacitance)C(f=1M Hz ，VR =0V) (pF)
Part Numbe r	Test temperature Tch (℃)	Spectral response λ (nm)	VR =0.01V	VR =0.5V
GESTIN-2TE -TO8-0300	25	900-2700	0.1	0.5	50
GESTIN-2TE -TO8-0500			0.2	1	100
GESTIN-2TE -TO8-1000			1	4	300
GESTIN-2TE -TO8-2000			4	10	800
GESTIN-2TE -TO8-3000			10	40	2000

Part Number	Peak response (A/W)	Junction impedance Rsh(VR =10mV) MΩ	Peak detection rateD*(cm·Hz1/2/W)	Noise Equivalent Power NE
				P (W/Hz1/2)
GESTIN-2TE-TO8 -0300	1	3500	3 × 1012	8.9 × 10-15

GESTIN-2TE-TO8 -0500		1000		1.5 × 10-14
GESTIN-2TE-TO8 -1000		300		3.0 × 10-14
GESTIN-2TE-TO8 -2000		80		5.9 × 10-14
GESTIN-2TE-TO8 -3000		40		8.9 × 10-14

Response Curve

TEC parameters

Operating environment

Parameter	Typ
Operating temperature (℃)	-45~ +55
Storage temperature (℃)	-50~ +60

Characteristics of Thermoelectric Cooler

The detector integrates a two-stage thermoelectric cooler (TEC). The center of the cooling surface is the center of the lower surface of the detector. The cooling area should be ≥6mm×6mm. Its performance parameters are shown in the following table:

Performance indicators	Value
Max. thermal load power (Qmax/W)	0.93W
Max. allowable load current (ITEC-max/A)	1A
Max. allowable load voltage (VTEC-max/V)	2V

Temperature Monitoring Module Characteristics

This detector uses a thermistor as a temperature monitoring module. The mapping between the resistance value and the temperature at the operating temperature is shown in the following table:

Temperature(℃)	Resistance (kΩ)	Temperature(℃)	Resistance (kΩ)
-65	94.270	-15	6.909
-60	69.290	-10	5.587
-55	51.500	-5	4.549
-50	38.700	0	3.729
-45	29.400	5	3.075
-40	22.560	10	2.55
-35	17.490	15	2.126
-30	13.690	20	1.782
-25	10.810	25	1.5
-20	8.608	30	1.268

The corresponding relationship between thermistor value and temperature is as follows:

T1: Test target temperature, in °C;

T2: Reference point temperature, in °C. The typical value of reference temperature in the range of -20~70°C is 10 or 40°C. A reference temperature close to the target temperature should be selected.

R1: Thermistor resistance corresponding to T1, in kΩ;

R2: Thermistor resistance corresponding to T2, in kΩ;

B: Thermistor resistance corresponding to T2, in kΩ;

B: Between 20 and 70 degrees, the typical B value is 3019.6±60.

Note:

a) During TEC installation, please pay attention to the new resistance introduced by the external electrical structure. If the new resistance exceeds 10% of the TEC resistance, the I-V curve needs to be recalibrated.

b) It is recommended to open the TEC in a way that the connection resistance is small. If welding is required, short-circuit grounding protection is required, the welding temperature is ≤250℃, and the welding time is <10s;

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