|
info@idealphotonics.com
search
1320nm High-Temperature High-Power DFB Chip 250mW
The 1320nm high-temperature high-power DFB laser chip is suitable for operation in high-temperature environments, offering advantages such as ultra-low RIN noise and high output optical power. The output power can reach up to 250mW. Wavelength customization services are available based on customer requirements.
Product features:High power and high temperature design、 No mode hopping over a wide temperature and current range、 Low beam divergence angle、 Low RIN (Relative Intensity Noise)、 High feedback tolerance
Application area:Optical Transceiver、 Data Center
Unit Price
Please contact customer service for a discounted quote.
Part Number
DFB-1320-CoC-250-85
Lead Time
Please contact customer service for lead time.
Stock
Please contact customer service for stock availability.
Add to Inquiry
Inquire online
General Parameters
Dimensional Drawing

Parameters

Recommended Operating Conditions

Parameter

Min Value

Typ. Value

Max Value

Unit

Chip Temperature

65

85

105

°C

Forward Current


800

900

mA

Output Power

20


250

mW

 

Basic Parameters Tested for Each Sample @ CW, 85°C, 800mA

Parameter

Min Value

Typ. Value

Max Value

Unit

Output Power @ 900mA

250



mW

Forward Voltage


1.5

3

V

Threshold Current


100

130

mA

Power Conversion Efficiency


18


%

Peak Wavelength*

1315

1320

1325

nm

Wavelength Temperature Tuning Coefficient


90


pm/°C

Wavelength Current Tuning Coefficient


2.9


pm/mA

Side Mode Suppression Ratio (SMSR)

40

45


dB

Slow Axis Beam Divergence Angle (FWHM)

7

8

9

deg

Fast Axis Beam Divergence Angle (FWHM)

33

35

37

deg

Polarization Extinction Ratio (PER)

15

20


dB

Polarization


TE



* Wavelengths in the range of 1270-1330nm can be provided upon request.

Noise Characteristics (Conditions @ CW, 85°C, 800mA)

Parameter

Min Value

Typ. Value

Max Value

Unit

Linewidth (Self-Heterodyne @ 80MHz)


1

5

MHz

Relative Intensity Noise (RIN)



-140

dB/Hz

Feedback Sensitivity (optical)



-30

dB

* Average value, measurement range from DC-10GHz

** Single-line spectrum and RIN <-140 dB/Hz

Chip Parameters

Parameter

Min Value

Typ. Value

Max Value

Unit

Chip Length


3


mm

Front-End Back Reflection


0.01

0.1

%

Back-End Back Reflection

90

99


%

 


Spectrum

4.1.png 

 


Optoelectronic Current-Voltage-Power Characteristics

4.2.png

  


Power Conversion Efficiency

4.3.png 

 


Spectral (resolution 10 pm)

4.4.png 

 


Peak Wavelength Chart

4.5.png 

 

 

Wavelength-Current Tuning Curve

4.6.png

 

 

Wavelength-Temperature Tuning Curve

4.7.png 

 


Absolute Maximum Ratings

Parameters

Min

Max

Unit

Forward Current


950

mA

Reverse Voltage


1

V

Operating Temperature

5

125

°C

Soldering Temperature (max 5 sec)


250

°C

Storage Temperature (in original sealed package)

-40

85

°C

 

Product Recommendation