Parameters
Recommended Operating Conditions | ||||
Parameter | Min Value | Typ. Value | Max Value | Unit |
Chip Temperature | 65 | 85 | 105 | °C |
Forward Current | 800 | 900 | mA | |
Output Power | 20 | 250 | mW |
Basic Parameters Tested for Each Sample @ CW, 85°C, 800mA | ||||
Parameter | Min Value | Typ. Value | Max Value | Unit |
Output Power @ 900mA | 250 | mW | ||
Forward Voltage | 1.5 | 3 | V | |
Threshold Current | 100 | 130 | mA | |
Power Conversion Efficiency | 18 | % | ||
Peak Wavelength* | 1315 | 1320 | 1325 | nm |
Wavelength Temperature Tuning Coefficient | 90 | pm/°C | ||
Wavelength Current Tuning Coefficient | 2.9 | pm/mA | ||
Side Mode Suppression Ratio (SMSR) | 40 | 45 | dB | |
Slow Axis Beam Divergence Angle (FWHM) | 7 | 8 | 9 | deg |
Fast Axis Beam Divergence Angle (FWHM) | 33 | 35 | 37 | deg |
Polarization Extinction Ratio (PER) | 15 | 20 | dB | |
Polarization | TE |
* Wavelengths in the range of 1270-1330nm can be provided upon request.
Noise Characteristics (Conditions @ CW, 85°C, 800mA) | ||||
Parameter | Min Value | Typ. Value | Max Value | Unit |
Linewidth (Self-Heterodyne @ 80MHz) | 1 | 5 | MHz | |
Relative Intensity Noise (RIN) | -140 | dB/Hz | ||
Feedback Sensitivity (optical) | -30 | dB |
* Average value, measurement range from DC-10GHz
** Single-line spectrum and RIN <-140 dB/Hz
Chip Parameters | ||||
Parameter | Min Value | Typ. Value | Max Value | Unit |
Chip Length | 3 | mm | ||
Front-End Back Reflection | 0.01 | 0.1 | % | |
Back-End Back Reflection | 90 | 99 | % |
Spectrum
Optoelectronic Current-Voltage-Power Characteristics
Power Conversion Efficiency
Spectral (resolution 10 pm)
Peak Wavelength Chart
Wavelength-Current Tuning Curve
Wavelength-Temperature Tuning Curve
Absolute Maximum Ratings
Parameters | Min | Max | Unit |
Forward Current | 950 | mA | |
Reverse Voltage | 1 | V | |
Operating Temperature | 5 | 125 | °C |
Soldering Temperature (max 5 sec) | 250 | °C | |
Storage Temperature (in original sealed package) | -40 | 85 | °C |