350-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ3.6mm

IdealPhotonics’ silicon-based bias photodetector has a light-sensitive range of 200nm to 1100nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for general photodetector applications, offering excellent performance and high cost-effectiveness, along with comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.

Product features：Light-sensitive range 200nm-1100nm, commonly used in ultraviolet and visible light measurements、 Bias-type detector, with extremely low noise, fast response, and no gain、 Low cost, suitable for general photodetector applications、 Excellent performance, high cost-effectiveness, and comprehensive technical support、 Offer customization services.

Application area：Ultraviolet and visible light measurements.

Unit Price

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Part Number

PDSBC3E36

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General Parameters

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Dimensional Drawing

Main Parameters

Parameter	Value
Wavelength Range	200-1100nm	350-1100nm		320-1100nm
Active area	Φ1.0mm	Φ3.6mm		Φ10.0mm
Bandwidth	350MHz	25MHz		10MHz
Rise Time (@50Ω)	1ns	14ns		35ns
NEP	5.0 × 10^-14W/H z^1/2	1.6 × 10^-14W/Hz^1/2		2.4 × 10^-14W/Hz^1/2
Dark Current	0.3nA(Typ.)/10 nA(Max)	0.35nA(Typ.)/6.0nA(Max)		0.9nA(Typ.)/10nA(Max)
Junction Capacitance	6pF(Typ.)	40pF(Typ.)		150pF(Typ.)
Bias Voltage	10V
Output Current	0~10mA
Output Voltage	~9V(Hi-Z)； ~170 mV(50Ω)
Light-sensitive Depth	0.09" (2.2 m m)	0.09" (2.2 mm)		0.13" (3.3mm)
Operating Temperature	10-40℃
Storage Temperature	-20-70℃
Detector Weight	0.10kg
Undervoltage Indicator	Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω)
Dimensions	2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)
Power Supply	Power Switch	Signal Interface	Battery Monitoring	Support Rod Interface	Optical Interface
A23 ，12VDC ，40mAh	Sliding Switch	BNC Female Socket	Instantaneous Button	M4 X 2	SM1 X 1 SM0.5 X 1

SI Response Curve:

Attachment 1: Optional Configuration Table

Silicon-based Bias Photodetector	Optional Configurations
Product Name	Material	Type	Features	Wavelength Range Photodetector Size	Optional Configurations
PD:"Photodetector"	S: Si Silicon	A: Amplified	A: Adjustable Gain	2B10 ：200-1100nm ，Φ1.0mm
				3E36 ：350-1100nm ，Φ3.6mm
				3D100 ：320-1100nm ，Φ10.0m m

Attachment 2: Model and Part Number Cross-reference Table

Model	Part Number	Specs
PDSBC2B10	A80153421	200-1100nm Silicon-based Bias Photodetector, Active area Φ1.0mm, Rise Time 1ns, Bandwidth 350 MHz
PDSBC3E36	A80153422	350-1100nm Silicon-based Bias Photodetector, Active area Φ3.6mm, Rise Time 14ns, Bandwidth 25 MHz
PDSBC3D100	A80153423	320-1100nm Silicon-based Bias Photodetector, Active area Φ10.0mm, Rise Time 35ns, Bandwidth 10 MHz

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