350-1100nm Silicon-based Amplified Photodetector Photodetector Size: 3.6mm × 3.6mm

IdealPhotonics' silicon-based amplified photodetector covers 190nm–1100nm with 8 adjustable gain settings, providing quantitative photoelectric conversion and a wide dynamic range. It is suitable for UV and visible light measurements, offering excellent performance and cost-efficiency.

Product features：Light-sensitive range: 190nm~1100nm, commonly used in UV and visible light measurements、 Amplified detector with 8 adjustable gain settings for quantitative photoelectric conversion、 Wide dynamic range, suitable for various photoelectric development applications、 Excellent performance, cost-effective, with comprehensive technical support、 Custom solutions available

Application area：Ultraviolet and visible light measurements

Unit Price

Please contact customer service for a discounted quote.

Part Number

PDSAA3E36

Lead Time

Please contact customer service for lead time.

Stock

Please contact customer service for stock availability.

Add to Inquiry

Inquire online

General Parameters

Download Document

Dimensional Drawing

General Parameters

Parameter	Value
Wavelength Range	350-1100nm	190-1100n m	320-1100n m	190-1100nm
Active area	3.6mm×3.6mm		Φ9.8mm
Response Time Constant	10ns	0.5us	35ns	3us
Bandwidth Range	DC ～12MHz		DC ～11MHz
Gain Range	Hi-Z Load: 0.51kV/A～4.75MV/A; 50Ω Load: 0.75kV/A～2.38MV/A
Signal Amplitude	Hi-Z Load: 0～10V; 50Ω Load: 0V～5V
Gain Adjustment	Rotary switch: 0～70dB, 10dB per step, 8 steps; bandwidth inversely proportional to gain.
Photodetector Depth	0.13" (3.3 mm)
Detector Weight	0.10kg
Operating Temperature	10-40℃
Storage Temperature	-20-70℃
Dimensions	2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
NEP	3.25~75.7 pW/Hz^1/2	2.12~69.7p W/Hz^1/2	2.67~71.7p W/Hz^1/2	1.33~45.1pW/Hz^1/2
Power Interface	Power Switch	Signal Interface	Gain Adjustment	Mounting Interface	Optical Interface
LUMBERG RSMV3 FE MALE	Sliding switch with LED indicator	BNC Female Socket	8 档旋钮	M4 X 2	SM1 X 1 SM0.5 X 1

8-Step Adjustable Gain Parameters：

0dB		10dB		20dB		30dB
Gain (Hi-Z)	1.51× 10³V/ A	Gain (Hi-Z)	4.75× 10³V /A	Gain (Hi-Z)	1.5 × 10⁴V/ A	Gain (Hi-Z)	4.75× 10⁴ V/A
Gain (50Ω)	0.75× 10³V/ A	Gain (50Ω)	2.38× 10³V /A	Gain (50Ω)	0.75× 10⁴V /A	Gain (50Ω)	2.38× 10⁴V/A
Bandwidth (BW)	12MHz	Bandwidth (BW)	1.6MHz	Bandwidth (BW)	1MHz	Bandwidth (BW)	260kHz
Noise (RMS)	258uV	Noise (RMS)	192uV	Noise (RMS)	207uV	Noise (RMS)	211uV
40dB		50dB		60dB		70dB
Gain (Hi-Z)	1.51× 10⁵V/	Gain (Hi-Z)	4.75× 10⁵V	Gain (Hi-Z)	1.5 × 10⁶V/	Gain (Hi-Z)	4.75× 10⁶
	A		/A		A		V/A
Gain (50Ω)	0.75× 10⁵V/ A	Gain (50Ω)	2.38× 10⁵V /A	Gain (50Ω)	0.75× 10⁶V /A	Gain (50Ω)	2.38× 10⁶ V/A
Bandwidth (BW)	90MHz	Bandwidth (BW)	28MHz	Bandwidth (BW)	9kHz	Bandwidth (BW)	3kHz
Noise (RMS)	214uV	Noise (RMS)	234uV	Noise (RMS)	277uV	Noise (RMS)	388uV
Signal Bias	±8mV(Typ.) ， ±12mV(Max)

SI Response Curve：

Attachment 1: Optional Configuration Table

Silicon-Based Amplified Photodetector	Optional Configurations
Product Name	Material	Type	Feature	Wavelength Range Photodetector Size	Reserved Optional Configurations
PD:"Photodetector"	S: Si Silicon	A: Amplified	A: Adjustable Gain	1A36：190-1100nm ，3.6 ×3.6 mm
				1A98：190-1100nm，Φ9.8mm
				3D98：320-1100nm，Φ9.8mm
				3E36：350-1100nm ，3.6 ×3.6 mm

Attachment 2：Model Number and Part Number Correspondence

Model	Part Number	Specs
PDSAA1A36	A80153413	190-1100nm Silicon-based Amplified Photodetector, Active area 3.6 × 3.6 mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~12MHz
PDSAA1A98	A80153414	190-1100nm Silicon-based Amplified Photodetector, Active area Φ9.8mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~11MHz
PDSAA3D98	A80153415	320-1100nm Silicon-based Amplified Photodetector, Active area Φ9.8mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~11MHz
PDSAA3E36	A80153416	350-1100nm Silicon-based Amplified Photodetector, Active area 3.6 × 3.6 mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~12MHz

Product Recommendation