900-1700nm InGaAs Geiger-mode avalanche photodiode with built-in TEC cooling

InGaAs avalanche photodiode (APD) is a dedicated device for short-wave near-infrared single photon detection. It can meet the technical requirements of quantum communication, weak light detection and other fields for high-efficiency and low-noise single photon detection, and realize single photon detection of 0.9 ~ 1.7μm wavelength.

Product features：Spectral response range 0.9~1.7μm、 High detection efficiency, low dark count rate、 6 pin TO8

Application area：Weak light detection、 Quantum secure communication、 Biomedical

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Part Number

IGA-APD-GM104-R-TEC

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General Parameters

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Dimensional Drawing

Linear mode parameters

PN#				IGA-APD-GM104-TEC
Parameter	Symbol	Unit	Test conditions	Min.	Typical	Max.
Reverse breakdown voltage	V_BR	V	22℃±3℃ , I_D=10μA	60	80	90
Responsivity	R_e	A/W	22℃±3℃, λ =1550nm ，M =1	0.8	0.85
Dark current	I_D	nA	22℃±3℃, M =10		0.1	0.3
Capacitance	C	pF	22℃±3℃ , M =10，f=1MHz			0.25
Breakdown voltage temperature coefficient	η	V/K	-40℃ ~80℃, I_D =10μA			0.15

Geiger mode parameters

Parameter	Unit	Test conditions	Min.	Typical	Max.
Single photon detection efficiency PDE	%	-45℃, λ =1550nm, 0.1ph/pulse, Poisson distribution single photon source	20	-
Dark count rate DCR	kHz	-45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20%	-	-	20*
After pulse probability APP		-45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20%	-	-	1× 10^-3
Time jitter T_j	ps	-45℃, 1ns gate width, 2MHz gated repetition rate, PDE=20%	-	-	100

* Different grades and specifications are available

Room temperature IV curve

DCR-PDE(-45℃, fg=2MHz)

Temperature coefficien

Capacitor voltage

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