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760nm high power single mode DFB laser 40mW (TO5 package oxygen detection)
With optimized optical properties, the 760nm single-mode DFB is ideal for demanding sensing system applications. The innovative chip design has suppressed high-order longitudinal and transverse modes while providing linear polarization stability. The laser has high output power, narrow linewidth and good consistency and is currently favored by domestic scientific research customers. We currently have in stock wavelength 760nm DFB for TDLAS oxygen detection, 795nm VCSEL for Rb atomic clock experiments, and 852nm VCSEL for CS atomic cooling. The original model has been updated to PL-DFB-0760-40-A81-TO5
Product features:Ultra-high output power、 Narrow linewidth、 Internal TEC and thermistor 、 2 nm TEC tunability
Application area:TDLAS oxygen analysis detection、 Optical coherence experiment
Unit Price
Please contact customer service for a discounted quote.
Part Number
PL-DFB-0760-D-A81-TO5
Lead Time
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Stock
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General Parameters
Dimensional Drawing

Parameter

Parameter

Symbol

Min.

Typical

Max.

Unit

Note

Incident wavelength

λR

760

760.5

761

nm

T = 20°C, ITEC = 0, POP= 35mw

Threshold current

ITH


40


mA

T = 20°C

Output power

Popt

20

30

40

mW

T = 0 … 50°C

Threshold voltage

UTH


1.80


V


Laser current

IOP



130

mA

Popt = 35mw

Laser voltage

UOP


2.0


V

Popt = 35mw

Electro-optical conversion ratio

ηWP


12


%

Popt = 20mw

Slope efficiency

ηS


0.74


W/A

T = 20°C

3dB modulation bandwidth

ν3dB

0.10



GHz

Popt  =35mw(For ESD protection diodes)

Relative noise intensity

RIN


-130

-120

dB/Hz

Popt = 0.3 mW @ 1 GHz

Wavelength tuning current



0.01


nm/mA


Wavelength tuning temperature



0.1


nm/deg


Thermistor

Rthermal

3


5

K/mW


Side mode suppression


30



dB


Beam divergence

θ

10


25

°

Popt = 35mwFull 1/e2 bandwidth

Spectral bandwidth

Δν


3


MHz

Popt = 35mw

TEC current

ITEC



1000

mA

Proper heat sink required

 图片2.png

 

 

Absolute Maximum

storage temperature

-40 … 125°C

Operating temperature

-20 … 80°C

Electric power loss

500mW

Forward laser current

130mA

Backward current

10mA

Soldering temperature*

270C°

(*TEC temperature must be below 70°C)

 

Spectrum

5dde38022c9fe.jpg

 

 

L-I-V curve

5dde382b65472.png

 

Temperature/wavelength tuning of TEC current

5dde386e680d4.png

 

Beam quality analysis

5dde389dc03bd (1).jpg

 

 

Pin definition

With TEC pin configuration

5dde3a4f92f2b.png

 

SN#

PIN definition

SN#

PIN definition

1

LD+

5

Thermistor

2

LD-

6

Thermistor

3

Cooler-

7

PD+

4

Cooler+

8

PD-


Oxygen absorption lines

5dde3b769ab87.png

 


Ordering Information

PL-DFB-□□□□-☆-A8▽-TO5

□□□□:wavelength

0760:760nm

1270:1270nm

1532:1532nm

1392:1392nm

1512:1512nm

1567: 1567nm

*****

1653.7: 1653.7nm

☆:output power

A:10mW

B:20mW

C:  30mW

D:  40mW

▽:wavelength tolerance

1:±1nm

2:±2nm

 

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