Main Parameters
Parameters | Value | ||||
Wavelength Range | 800-2600nm | 800-2200nm | |||
Response Time Constant | 25ns | 35ns | 200ns | ||
Gain Range | Hi-Z Load: 1.51kV/A~4.75MV/A; 50Ω Load: 0.75kV/A~2.38MV/A | ||||
Signal Amplitude | Hi-Z Load: 0~10V; 50Ω Load: 0~5V | ||||
Gain Adjustment Mode | Rotatable switch adjustment: 0~70dB, 10dB per step, 8 steps. Bandwidth is inversely proportional to gain. | ||||
NEP | 1.0 × 10-12W/Hz1/2 | 1.0 × 10-13W/Hz1/2 | 2.5 × 10-14W/Hz1/2 | ||
Active Area | 1mm×1mm | 1mm×1mm | 2mm×2mm | ||
Sensitive Surface Depth | 0.13" (3.3 mm) | ||||
Detector Net Weight | 0.10kg | ||||
Operating Temperature | 10-40℃ | ||||
Storage Temperature | -20-70℃ | ||||
Appearance Dimensions | 2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm) | ||||
Power Interface | Power Switch | Signal Interface | Gain Adjustment | Mounting Interface | Optical Interface |
LUMBERG R SMV3 FEMA LE | Sliding Switch With LED Indicator | BNC Female Socket | 8-Step Knob Adjustment | M4×2 | SM1× 1 SM0.5 × 1 |
Eight-Step Quantitative Adjustable Gain Parameters
0dB | 10dB | 20dB | 30dB | ||||
Gain (Hi-Z) | 1.51× 103V /A | Gain (Hi-Z) | 4.75× 103V /A | Gain (Hi-Z) | 1.5 × 104V/ A | Gain (Hi-Z) | 4.75× 104 V/A |
Gain (50Ω) | 0.75× 103V /A | Gain (50Ω) | 2.38× 103V /A | Gain (50Ω) | 0.75× 104V /A | Gain (50Ω) | 2.38× 104 V/A |
Bandwidth | 13MHz | Bandwidth | 1.7MHz | Bandwidth | 1.1MHz | Bandwidth | 300kHz |
Noise(RMS) | ≤258uV | Noise(RMS) | ≤250uV | Noise(RMS) | ≤250uV | Noise(RMS) | ≤250uV |
40dB | 50dB | 60dB | 70dB | ||||
Gain (Hi-Z) | 1.51× 105V /A | Gain (Hi-Z) | 4.75× 105V /A | Gain (Hi-Z) | 1.5 × 106V/ A | Gain (Hi-Z) | 4.75× 106 V/A |
Gain (50Ω) | 0.75× 105V | Gain (50Ω) | 2.38× 105V | Gain (50Ω) | 0.75× 106V | Gain (50Ω) | 2.38× 106 |
/A | /A | /A | V/A | ||||
Bandwidth | 90kHz | Bandwidth | 28kHz | Bandwidth | 9kHz | Bandwidth | 3kHz |
Noise (RMS) | ≤250uV | Noise (RMS) | ≤250uV | Noise (RMS) | ≤300uV | Noise (RMS) | ≤400uV |
Signal Offset | ±8mV(Typ.) , ±12mV(Max) |
Response Curve
Product Configuration
Attachment 1: Optional Configuration Table
Infrared Extended InGaAs Amplified Photodetector | Optional Configurations | ||||
Product Name | Material | Type | Features | Wavelength Range Photosensitive Area | Reserved Optional Configurations |
PD: "Photodetector" | J: InGaAs (Indium Gallium Arsenide) | A: Amplified Type | A: Adjustable Gain | 8M10 :800-2600nm ,1mm × 1mm | |
8L10 :800-2200nm ,1mm× 1mm | |||||
8L20 :800-2200nm ,2mm× 2mm |
Attachment 2: Model and Part Number Cross Reference Table
Model | Part Number | Specs |
PDJAA8M10 | A80153457 | 800-2600nm infrared extended InGaAs photodetector, light-sensitive size 1mm×1mm, 0~70 dB eight-level quantitative adjustable gain, response time constant 25ns |
PDJAA8L10 | A80153458 | 800-2200nm infrared extended InGaAs photodetector, light-sensitive size 1mm×1mm, 0~70 dB eight-level quantitative adjustable gain, response time constant 35ns |
PDJAA8L20 | A80153459 | 800-2200nm infrared extended InGaAs photodetector, light-sensitive size 2mm×2mm, 0~70 dB eight-level quantitative adjustable gain, response time constant 200ns |