800-2600nm infrared extended InGaAs amplified photodetector, response time constant 25ns

IdealPhotonics' InGaAs Amplified Photodetector with infrared extension covers a sensing range from 800nm to 2600nm. It features 8 adjustable gain levels for quantifiable photoelectric conversion and offers a wide dynamic range. This detector is ideal for various photoelectric development scenarios, providing excellent performance at a high cost-performance ratio. It is commonly used for near-infrared and mid-infrared light measurements.

Product features：Sensing range of 800nm to 2600nm, often used in near- and mid-infrared light measurements、 Amplified detector with 8 adjustable gain levels for quantifiable photoelectric conversion、 Wide dynamic range, suitable for various infrared photoelectric development scenarios、 Excellent performance and high cost-effectiveness、 Full technical support、 Customization available

Application area：Near- and mid-infrared light measurement

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Part Number

PDJAA8M10

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General Parameters

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Dimensional Drawing

Main Parameters

Parameters	Value
Wavelength Range	800-2600nm	800-2200nm
Response Time Constant	25ns	35ns		200ns
Gain Range	Hi-Z Load: 1.51kV/A～4.75MV/A; 50Ω Load: 0.75kV/A～2.38MV/A
Signal Amplitude	Hi-Z Load: 0～10V; 50Ω Load: 0～5V
Gain Adjustment Mode	Rotatable switch adjustment: 0～70dB, 10dB per step, 8 steps. Bandwidth is inversely proportional to gain.
NEP	1.0 × 10-12W/Hz1/2	1.0 × 10-13W/Hz1/2		2.5 × 10-14W/Hz1/2
Active Area	1mm×1mm	1mm×1mm		2mm×2mm
Sensitive Surface Depth	0.13" (3.3 mm)
Detector Net Weight	0.10kg
Operating Temperature	10-40℃
Storage Temperature	-20-70℃
Appearance Dimensions	2.79" X 2.07" X 0.89" (70.9 mm X 52.5 mm X 22.5 mm)
Power Interface	Power Switch	Signal Interface	Gain Adjustment	Mounting Interface	Optical Interface
LUMBERG R SMV3 FEMA LE	Sliding Switch With LED Indicator	BNC Female Socket	8-Step Knob Adjustment	M4×2	SM1× 1 SM0.5 × 1

Eight-Step Quantitative Adjustable Gain Parameters

0dB		10dB		20dB		30dB
Gain (Hi-Z)	1.51× 10³V /A	Gain (Hi-Z)	4.75× 10³V /A	Gain (Hi-Z)	1.5 × 10⁴V/ A	Gain (Hi-Z)	4.75× 10⁴V/A
Gain (50Ω)	0.75× 10³V /A	Gain (50Ω)	2.38× 10³V /A	Gain (50Ω)	0.75× 10⁴V /A	Gain (50Ω)	2.38× 10⁴V/A
Bandwidth	13MHz	Bandwidth	1.7MHz	Bandwidth	1.1MHz	Bandwidth	300kHz
Noise(RMS)	≤258uV	Noise(RMS)	≤250uV	Noise(RMS)	≤250uV	Noise(RMS)	≤250uV
40dB		50dB		60dB		70dB
Gain (Hi-Z)	1.51× 10⁵V /A	Gain (Hi-Z)	4.75× 10⁵V /A	Gain (Hi-Z)	1.5 × 10⁶V/ A	Gain (Hi-Z)	4.75× 10⁶ V/A
Gain (50Ω)	0.75× 10⁵V	Gain (50Ω)	2.38× 10⁵V	Gain (50Ω)	0.75× 10⁶V	Gain (50Ω)	2.38× 10⁶
	/A		/A		/A		V/A
Bandwidth	90kHz	Bandwidth	28kHz	Bandwidth	9kHz	Bandwidth	3kHz
Noise (RMS)	≤250uV	Noise (RMS)	≤250uV	Noise (RMS)	≤300uV	Noise (RMS)	≤400uV
Signal Offset	±8mV(Typ.) ， ±12mV(Max)

Response Curve

Product Configuration

Attachment 1: Optional Configuration Table

Infrared Extended InGaAs Amplified Photodetector	Optional Configurations
Product Name	Material	Type	Features	Wavelength Range Photosensitive Area	Reserved Optional Configurations
PD: "Photodetector"	J: InGaAs (Indium Gallium Arsenide)	A: Amplified Type	A: Adjustable Gain	8M10 ：800-2600nm ，1mm × 1mm
				8L10 ：800-2200nm ，1mm× 1mm
				8L20 ：800-2200nm ，2mm× 2mm

Attachment 2: Model and Part Number Cross Reference Table

Model	Part Number	Specs
PDJAA8M10	A80153457	800-2600nm infrared extended InGaAs photodetector, light-sensitive size 1mm×1mm, 0～70 dB eight-level quantitative adjustable gain, response time constant 25ns
PDJAA8L10	A80153458	800-2200nm infrared extended InGaAs photodetector, light-sensitive size 1mm×1mm, 0～70 dB eight-level quantitative adjustable gain, response time constant 35ns
PDJAA8L20	A80153459	800-2200nm infrared extended InGaAs photodetector, light-sensitive size 2mm×2mm, 0～70 dB eight-level quantitative adjustable gain, response time constant 200ns

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