350-1100nm Silicon-Based Photodetector with Amplification

IdealPhotonics' silicon-based amplified photodetector has a sensitive range of 350nm~1100nm, 8 levels of programmable adjustable gain, can achieve quantitative photoelectric conversion, and has a wide dynamic range. It is suitable for various optoelectronic development scenarios. 100% of the devices are domestically produced, with excellent performance and high cost performance. It provides all-round technical support and is often used in visible light and near-infrared light measurement.

Product features：The photosensitive range covers 350nm~1100nm, and is often used for visible light and near-infrared light measurement、 Amplified detector, programmable 8-level adjustable gain, quantitative photoelectric conversion、 Wide dynamic range, suitable for various photoelectric development scenarios、 100% of the devices are domestically produced、 Excellent performance, high cost performance, all-round technical support、 Provide non-standard customization services

Application area：Visible and near-infrared light measurements

Unit Price

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Part Number

PDSAA3E36C

Lead Time

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General Parameters

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Dimensional Drawing

General Parameters

Parameter	Value
Wavelength Range	350-1100nm
Photosensitive size	3.6mm×3.6mm
Peak wavelength	970nm (Typ.)
Amplifier GBP	230MHz
Bandwidth Range	DC ～6.7MHz
Gain Range	Hi-Z Load: 1.5kV/A～4.7MV/A; 50Ω Load: 0.75kV/A～2.35MV/A
Signal Amplitude	Hi-Z Load: 0～10V; 50Ω Load: 0V～5V
Gain Adjustment	Programmable adjustment, 8 levels in total. Bandwidth is inversely proportional to gain.
Photodetector Depth	0.06" (1.5 mm)
Detector Weight	0.01kg
Operating Temperature	10-40℃
Storage Temperature	-20-70℃
Dimensions	1.47" X 1.47" (37.34mm X 37.34mm)
Power Interface	Power Switch	Signal Interface	Gain Adjustment
XH2.54mm 3Pin port	Slide switch With LED indicator	MMCX-KWE female elbow	Programmable adjustment

8-Step Adjustable Gain Parameters：

0		1		10		11
Gain (Hi-Z)	1.5× 10³V/ A	Gain (Hi-Z)	4.7× 10³V /A	Gain (Hi-Z)	1.5 × 10⁴V/ A	Gain (Hi-Z)	4.7× 10⁴V/A
Gain (50Ω)	0.75× 10³V/ A	Gain (50Ω)	2.35× 10³V /A	Gain (50Ω)	0.75× 10⁴V /A	Gain (50Ω)	2.35× 10⁴ V/A
Bandwidth (BW)	6.7MHz	Bandwidth (BW)	920KHz	Bandwidth (BW)	600KHz	Bandwidth (BW)	160kHz
Noise (RMS)	258uV	Noise (RMS)	192uV	Noise (RMS)	207uV	Noise (RMS)	211uV
100		101		110		111
Gain (Hi-Z)	1.5× 10⁵V/	Gain (Hi-Z)	4.7× 10⁵V	Gain (Hi-Z)	1.5 × 10⁶V/	Gain (Hi-Z)	4.7× 10⁶
	A		/A		A		V/A
Gain (50Ω)	0.75× 10⁵V/ A	Gain (50Ω)	2.35× 10⁵V /A	Gain (50Ω)	0.75× 10⁶V /A	Gain (50Ω)	2.35× 10⁶ V/A
Bandwidth (BW)	54MHz	Bandwidth (BW)	19MHz	Bandwidth (BW)	5kHz	Bandwidth (BW)	1.7kHz
Noise (RMS)	214uV	Noise (RMS)	234uV	Noise (RMS)	277uV	Noise (RMS)	388uV
Signal Bias	±8mV(Typ.) ， ±12mV(Max)

SI Response Curve：

Pin Definition

Pin Definition
Pin 1	GND
Pin 2	A
Pin 3	B
Pin 4	C
	Note: Pin2, Pin3, Pin4: A, B, C are used to adjust the gain.

Pin Definition	C	B	A
1.5×103V/A	0	0	0
4.7×103V/A	0	0	1
1.5×104V/A	0	1	0
4.7×104V/A	0	1	1
1.5×105V/A	1	0	0
4.7×105V/A	1	0	1
1.5×106V/A	1	1	0
4.7×106V/A	1	1	1

Attachment 1: Optional Configuration Table

Silicon-Based Amplified Photodetector

Optional Configurations

Product Name

Material

Type

Feature

Wavelength Range Photodetector Size

Reserved Optional Configurations

PD:"Photodetector"

S: Si Silicon

A: Amplified

A: Adjustable Gain

3E36：350-1100nm ，3.6 ×3.6

Devices are made in China: C

Attachment 2：Model Number and Part Number Correspondence

PN#	NO.	Specs
PDSAA3E36C	A80153460	350-1100nm Silicon-based Amplified Photodetector, Active area 3.6 × 3.6 mm,Programmable eight-speed quantitative adjustable gain, bandwidth range DC ~ 6.7MHz.

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